Pin-Hau Lin

Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

K. Kao, Tian-Li Wu, Cheng-Hung Wu, 2021, Microelectronics Reliability.

Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

K. Kao, Tian-Li Wu, Shun-Wei Tang, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).