J. Tzou

Device Characteristics of E-mode GaN HEMTs with a Second Gate Connected to the Source

J. Shieh, W. Yeh, C. Shen, 2020, Journal of Electronic Materials.

The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure

H. Kuo, Wen-Hsuan Wu, Sung-Wen Huang Chen, 2020 .

Study of Au-Based and Au-Free Ohmic Contacts in AlGaN/GaN HEMTs by Recessed Patterns

Y. Hsin, Chih-Wei Chen, J. Tzou, 2021, ECS Journal of Solid State Science and Technology.

Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications

W. Yeh, N. Mohankumar, D. Nirmal, 2020, Silicon.

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

C. Shen, J. Shieh, Wen-Hsien Huang, 2023, Micromachines.