V. Kharlamov

发表

Atomic scale modelling of nanosize Ni3Al cluster beam deposition on Al, Ni and Ni3Al (111) surfaces

M. Hou, E. Zhurkin, V. Kharlamov, 2002 .

Reconstruction of concentration profiles in heterostructures with chemically modified interfaces

H. Romanus, M. Lubov, J. Pezoldt, 2018, Journal of Applied Physics.

Characterization of pores in polished low temperature co-fired glass-ceramic composites for optimization of their micromachining

H. Bartsch, F. M. Morales, J. Jiménez, 2022, Surface Topography: Metrology and Properties.

Concentration Profiles in Laser-Deposited Ni/C and W/C Multilayers

W. Pompe, A. Sewing, H. Mai, 1998 .

Small defects in YBCO single crystals: Tc after neutron irradiation and annealing

R. Suris, H. Weber, F. Sauerzopf, 1997 .

Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method

E. E. Zhurkin, M. Lubov, J. Pezoldt, 2008 .

Carbon surface diffusion and SiC nanocluster self-ordering

O. Ambacher, J. Pezoldt, V. Cimalla, 2006 .

Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures

O. Ambacher, J. Pezoldt, A. Schmidt, 2006 .

Growth of three-dimensional SiC clusters on Si modelled by KMC

E. E. Zhurkin, O. Ambacher, J. Pezoldt, 2005 .

Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate

S. A. Korolev, E. E. Zhurkin, J. Pezoldt, 2004 .

Computer simulation of neutron transmutation doping of isotopically engineered heterostructures

S. A. Korolev, A. Schmidt, D. Kulikov, 2005 .

Molecular dynamics study of the diffusion barriers for silicon and carbon adatoms on a Si(111) surface

E. E. Zhurkin, M. Lubov, Y. Trushin, 2006 .

Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films

Y. Trushin, D. Kulikov, V. Kharlamov, 2010 .

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si

J. Pezoldt, M. Lubov, D. Kulikov, 2012 .

Impurity Effects on Nucleation and Growth of SiC Clusters and Layers on Si(100) and Si(111)

J. Pezoldt, M. Lubov, V. Kharlamov, 2019, Physics of the Solid State.

Kinetic modeling of the growth of copper clusters of various heights in subsurface layers of lead

M. Lubov, D. Kulikov, YuV Trushin, 2015 .

Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling

T. Stauden, J. Pezoldt, Y. Trushin, 2010 .

Size distribution of copper nanoclusters in amorphous carbon

V. Ivanov-omskii, Y. Trushin, D. Kulikov, 1999 .

High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

M. Voelskow, W. Skorupa, R. Yankov, 1997 .

The estimation of sputtering yields for SiC and Si

J. Pezoldt, G. Ecke, R. Kosiba, 2002 .

Estimation of the displacement threshold energies in Si and GaAs by means of ion sputtering of structures with thin marker layers

Yuri V. Trushin, V. S. Kharlamov, Boris J. Ber, 2001, Other Conferences.

Displacement threshold energies of impurity atoms in GaAs heterostructures

Yuri V. Trushin, V. S. Kharlamov, Boris J. Ber, 1999, Other Conferences.