D. Finn

Ultrafast Laser Scribe: An Improved Metal and ILD Ablation Process

Zhibin Lin, T. Osborn, Jon Mellen, 2019, 2019 IEEE 69th Electronic Components and Technology Conference (ECTC).

Pumping of GaAs1−x Px : N (at 77 °K, for x≲0.53) by an electron beam from a gas plasma

W. L. Johnson, N. Holonyak, M. Craford, 1973 .

The sulfur‐related trap in GaAs1−xPx

R. A. Craven, D. Finn, 1979 .

Electron-Core-Hole Interaction in GaAsP

D. Lynch, Bell Laboratories, D. Aspnes, 1980 .

Observation of the upper branch (N′Γ) of the nitrogen isoelectronic trap in GaAs1−yPy

N. Holonyak, P. Wright, W. O. Groves, 1977 .

Continuous room-temperature photopumped laser operation of visible-spectrum LPE In 1-x Ga x P 1-z As z (λ ~ 6700 Å)

N. Holonyak, B. Vojak, J. Rossi, 1981 .

Recombination transitions in Zn–N‐doped GaAs1−xPx in the direct and indirect composition regions

N. Holonyak, M. Craford, M. Ludowise, 1974 .

GaAs optical waveguide structures at 10.6-microm wavelength.

M. Craford, B. Sopori, M. Muller, 1975, Applied optics.

Recombination at clean and decorated misfit dislocations

G. Rozgonyi, Z. Radzimski, A. Buczkowski, 1992 .