Ya-Chi Hung

Improvement of Resistance Switching Behavior by Localizing Filament with Si Injection WOX Switching Layer

Sheng-Yao Huang, Ting-Chang Chang, Yong-En Syu, 2013 .

An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

Wei Zhang, Simon M. Sze, Ya-Chi Hung, 2015, IEEE Electron Device Letters.

Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

Ya-Chi Hung, Kuan-Chang Chang, Tsung-Ming Tsai, 2014, IEEE Transactions on Electron Devices.

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Ming-Jinn Tsai, Ming-Jer Kao, Ya-Chi Hung, 2011, IEEE Electron Device Letters.

Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

Simon M. Sze, Ya-Chi Hung, Kuan-Chang Chang, 2015, IEEE Electron Device Letters.

Redox Reaction Switching Mechanism in RRAM Device With Structure

Ming-Jinn Tsai, Simon M. Sze, Ya-Chi Hung, 2011 .

Physical and chemical mechanisms in oxide-based resistance random access memory

Yao-Feng Chang, Ya-Chi Hung, Kuan-Chang Chang, 2015, Nanoscale Research Letters.