J. Yang

Dispersion dependence of two-photon absorption transition on frequency in Si PIN photodetector

H. Cui, Wei Gao, Jundong Zeng, 2014 .

Dependence of transient photovoltage characteristics on bias light intensity for HgCdTe-based photovoltaic infrared detector pixel arrays

Haoyang Cui, Wei Gao, Jundong Zeng, 2014, Optical and Quantum Electronics.

Dependence of transient photovoltage characteristics on bias light intensity for HgCdTe-based photovoltaic infrared detector pixel arrays

H. Cui, Wei Gao, Jundong Zeng, 2014 .

Influence of trap filling and junction capacitance charging on photovoltage transients in HgCdTe-based infrared photodiode

H. Cui, Jialin Wang, Chaoqun Wang, 2014 .

Influence of trap filling and junction capacitance charging on photovoltage transients in HgCdTe-based infrared photodiode

Jialin Wang, Haoyang Cui, Chaoqun Wang, 2013, Optical and Quantum Electronics.

Extraction of Schottky barrier height in Hg0.702Cd0.298Te photovoltaic infrared detector pixel arrays by transient photovoltage measurements

H. Cui, Gaofang Li, Jialin Wang, 2014 .

Dispersion dependence of two-photon absorption transition on frequency in Si PIN photodetector

Haoyang Cui, Wei Gao, Jundong Zeng, 2013, Optical and Quantum Electronics.