Takashi Hori

发表

LATID (Large-Angle-Tilt Implanted Drain) FETs with Buried n^-Profile for Deep-Submicron ULSIs (Special Issue on Quarter Micron Si Device and Process Technologies)

Junji Hirase, Takashi Hori, Yoshinori Odake, 1994 .

Parasitic current characteristics of a MOSFET with a Si-implanted gate-SiO2

Takashi Hori, T. Ohzone, A Michii, 1995 .

Dual (n/sup +p/sup +/) polycide gate technology using Si-rich WSi/sub x/ to exterminate lateral dopant diffusion

Takashi Hori, T. Fujii, S. Hashimoto, 1994, Proceedings of 1994 VLSI Technology Symposium.

C-V and I-V Characteristics of a MOSFET with Si-Implanted Gate-SiO_2

Takashi Ohzone, Takashi Hori, 1994 .

Ultrathin Reoxidized Nitrided Oxide Prepared by Rapid Isothermal Processing for Advanced MOS Devices

Hiroshi Iwasaki, Takashi Hori, 1990, Other Conferences.

Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides

Hiroshi Iwasaki, Takashi Hori, Yoshiaki Yoshioka, 1988 .

Gate Dielectrics and MOS ULSIs

Takashi Hori, T. Hori, 1997 .

Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing

Hiroshi Iwasaki, Takashi Hori, T. Hori, 1989 .

Deep-submicrometer CMOS technology with reoxidized or annealed nitrided-oxide gate dielectrics prepared by rapid thermal processing

Takashi Hori, T. Hori, Y. Odake, 1992 .

Gate Dielectrics and MOS ULSIs: Principles, Technologies and Applications

Takashi Hori, T. Hori, 2011 .

Nitrided gate-oxide CMOS technology for improved hot-carrier reliability

Takashi Hori, 1993 .