Pierre Ruterana

发表

Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications

Michael Heuken, Arantxa Vilalta-Clemente, Magali Morales, 2010, OPTO.

A HREM ans STEM study of the genesis of Pd-Fe bimetallic catalyst

Pa Buffat, Pierre Ruterana, I Roch, 1989 .

Extended defects in semipolar (11-22) gallium nitride

Eva Monroy, Yadira Arroyo-Rojas Dasilva, Pierre Ruterana, 2010, OPTO.

Low d-spacing titanium-based multilayers for neutrons

Pierre Boher, Philippe Houdy, Pierre Ruterana, 1992, Optics & Photonics.

Performances Of C-W Multilayers As Soft X-Rays Optics : High Reflectivity In The Range 2d = 60 to 100 Å

Pierre Ruterana, M. Arbaoui, Ph . Houdy, 1986, Other Conferences.

A transmission electron microscopy study of low‐temperature reaction at the Co‐Si interface

Pierre Boher, Pierre Ruterana, P. Ruterana, 1990 .

Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

Ingrid Moerman, Pierre Ruterana, I. Moerman, 1998 .

Density-functional tight-binding calculations of electronic states associated with grain boundaries in GaN

Thomas Frauenheim, Jean Koulidiati, Pierre Ruterana, 2005 .

Core structures of the a-edge dislocation in InN

Pierre Ruterana, Xunya Jiang, Gerard Nouet, 2007 .

The Microstructure of Ti/Al and TiN Ohmic Contacts to Gallium Nitride

F. Huet, Hadis Morkoç, Pierre Ruterana, 1999 .

First-principles calculations of vacancy effects on structural and electronic properties of TiCx and TiNx

Pierre Ruterana, H. Aourag, B. Bouhafs, 2002 .

A TEM STUDY OF INGAN LAYERS AND QUANTUM WELLS GROWN BY MOCVD

Pierre Ruterana, R. Aguinet, M. A. Poisson, 1999 .

Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

Pierre Ruterana, Fernando Calle, Javier Grandal, 2011 .

Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001) Si surface of 6H-SiC by MBE

Hadis Morkoç, Pierre Ruterana, Gerard Nouet, 1997 .

Structure of the carrot defect in 4H-SiC epitaxial layers

Marek Skowronski, Pierre Ruterana, Mourad Benamara, 2005 .

Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Jean-Marc Routoure, Mehdi Rzin, Magali Morales, 2017, IEEE Transactions on Electron Devices.

Stillinger-Weber parameters for In and N atoms

Jun Chen, Pierre Ruterana, P. Ruterana, 2006 .

Atomistic modeling of the (a+c) -mixed dislocation core in wurtzite GaN

Pierre Ruterana, P. Ruterana, I. Belabbas, 2007 .

The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy

Hadis Morkoç, Pierre Ruterana, Andrei Botchkarev, 1997 .

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

Maria Tchernycheva, Eva Monroy, Pierre Ruterana, 2008 .

Reliability of Schottky contacts on AlGaN.

Ingrid Moerman, Eva Monroy, Pierre Ruterana, 2001 .

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN"112 ¯ 2…: Effect on the structural and optical properties

Eva Monroy, Pierre Ruterana, Bruno Gayral, 2008 .

V-defects and dislocations in InGaN/GaN heterostructures

Peter Goodhew, Pierre Ruterana, P. Ruterana, 2005 .

An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

Pierre Ruterana, P. Ruterana, G. Nouet, 2000 .

First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1−xN, InxGa1−xN and InxAl1−xN alloys

Pierre Ruterana, B. Bouhafs, Z. Dridi, 2003 .

Chemical and structural changes of Na2MoO4 as a methanol dehydrogenation catalyst

Michael R. Prairie, Pierre Ruterana, P. Ruterana, 1990 .