R. Huang

Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration

Y. Hao, Jincheng Zhang, Shenglei Zhao, 2021 .

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

E. Rosenbaum, S. Chetlur, E. Rosenbaum, 2000, IEEE Electron Device Letters.

Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability

Shenglei Zhao, Weihang Zhang, Xi Liu, 2024, IEEE Transactions on Electron Devices.