C. Lallement

An efficient parameter extraction methodology for the EKV MOST model

Matthias Bucher, Christian Enz, C. Lallement, 1996, Proceedings of International Conference on Microelectronic Test Structures.

Standardization of multigate MOSFET modeling

C. Lallement, N. Chevillon, F. Pregaldiny, 2012, Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2012.

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

C. Lallement, M. Madec, N. Chevillon, 2012, IEEE Transactions on Electron Devices.

Modeling of Power Mosfet and Bipolar Transistors Taking into Account the Thermoelectrical Interactions

R. Bouchakour, T. Maurel, C. Lallement, 1995 .

A high density integrated test matrix of MOS transistors for matching study

F. Krummenacher, L. Portmann, C. Lallement, 1998, ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157).

Accurate MOS modelling for analog circuit simulation using the EKV model

Christian Enz, Matthias Bucher, C. Lallement, 1996, 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96.

Horizontal axis hydrometric current meter with reference to the french experience. What future for this technique?

C. Perret, C. Lallement, A. Belleville, 2018, La Houille Blanche.

Simple solutions for modelling the non-uniform substrate doping

Matthias Bucher, Christian Enz, C. Lallement, 1996, 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96.

Modeling and simulation of the electrothermal behavior of the power bipolar transistor

R. Bouchakour, T. Maurel, C. Lallement, 1995, Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95.

Explicit Compact Model for Ultranarrow Body FinFETs

J.-M. Sallese, C. Lallement, F. Pregaldiny, 2009, IEEE Transactions on Electron Devices.

A 2D analytical model of threshold voltage for Pi-gate FinFET transistors.

O. Faynot, S. Cristoloveanu, Fabien Prégaldiny, 2010 .

Design-oriented compact models for CNTFETs

C. Lallement, J.-B. Kammerer, F. Pregaldiny, 2006, International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006..