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Comparison of lateral EST and IGBT devices on SOI substrates

M. Fullmann, J. Korec, J. Serafin, 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

ESR From boron in silicon at zero and small external stress I. Line positions and line structure

H. Neubrand, 1978 .

ESR from boron in silicon at zero and small external stress. II. Linewidth and crystal defects

H. Neubrand, 1978 .

Thermal behaviour of lateral power devices on SOI substrates

R. Constapel, M. Fullmann, R. Constapel, 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.