P. Huang

Suppression of current collapse by Access-region Carrier Enhancement technique in GaN-MOSFETs

M. Kuraguchi, Y. Kajiwara, A. Shindome, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing

P. Sung, K. Kao, Y. Lee, 2014, 2014 IEEE International Electron Devices Meeting.

Sub-5 nm Contacts and Induced p-n Junction Formation in Individual Atomically Precise Graphene Nanoribbons.

A. Sinitskii, J. Lyding, G. Girolami, 2023, ACS nano.