F. Kaesen

发表

Etching characteristics of Si and SiO2 with a low energy argon/hydrogen d.c. plasma source

W. Hansch, I. Eisele, A. Strass, 1997 .

Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping

W. Hansch, C. Fink, J. Schulze, 2002 .

Formation of single-crystalline silicon nanostructures by self-assembling growth with molecular beam epitaxy

H. Gossner, I. Eisele, H. Baumgärtner, 1998 .

Quantum wire transistor at locally grown edges

W. Hansch, I. Eisele, M. Kalus, 1998 .

Defect-free strain relaxation in locally MBE-grown SiGe heterostructures

E. Hammerl, W. Hansch, I. Eisele, 1997 .

Low temperature electrical surface passivation of MBE-grown pin diodes by hydrogen and oxygen plasma processes

W. Hansch, I. Eisele, A. Strass, 1998 .

Investigation of the spatial resolution of the light-addressable potentiometric sensor

Wolfgang J. Parak, I. Eisele, Werner Moritz, 2000 .

Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs

Ignaz Eisele, C Fink, V. Ramgopal Rao, 1998 .