S. Hutchinson

Implant isolation scheme for current confinement in graded-gap Gunn diodes

M. Kelly, M. Carr, S. Hutchinson, 1996 .

Electrical, optical and materials properties of ion beam synthesised (IBS) FeSi2

M. S. Finney, T. Bearda, G. Curello, 1995 .

Multi-stage annealing of defects in ion-implanted double-barrier diodes

M. Henini, L. Eaves, T. Foster, 1997 .

Carrier removal in n-type GaAs layers by oxygen implantation analysed by positron annihilation spectroscopy

A. Knights, S. Hutchinson, P. Simpson, 1997, IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat..

Ion implantation techniques for the fabrication of gallium arsenide multilayer microwave devices

S. Hutchinson, 1997 .

The electronic transport through ion-implanted double-barrier diodes

M. Henini, R. Gwilliam, K. Billen, 1997 .