J. Baur

发表

Attribution of the near-UV absorption bands of YAG:Ce to Ce3+-ions by MCD and ODMR

H. Reyher, J. Schneider, N. Hausfeld, 1999 .

Determination of the GaN/AlN band offset via the (/0) acceptor level of iron

Michael Kunzer, Ulrich Kaufmann, K. Maier, 1994 .

Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

Michael Kunzer, P. Schlotter, M. Kunzer, 1999 .

White light emitting diodes

P. Schlotter, J. Schneider, J. Baur, 1998 .

The dislocation-internal friction peak γ in tantalum

H. Schultz, J. Baur, W. Benoît, 1989 .

Origin of the low‐frequency internal friction background of gold

J. Baur, W. Benoît, 1986 .

Long-Range Migration of Self-Interstitials Studied in Niobium by Dislocation Pinning and Resistivity Recovery

J. Hillairet, H. Schultz, J. Lauzier, 1987 .

Study of the dislocation contribution to the internal friction background of gold

J. Baur, W. Benoît, 1987 .

Photoluminescence of residual transition metal impurities in GaN

H. Amano, K. Hiramatsu, I. Akasaki, 1995 .

Transition Metals in SiC Polytypes, as Studied by Magnetic Resonance Techniques

M. Kunzer, J. Schneider, J. Baur, 1997 .

Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers

H. Amano, K. Hiramatsu, I. Akasaki, 1994 .

Optical Absorption and Zeeman Study of 6H-SiC:Cr

M. Kunzer, P. Baranov, A. Dörnen, 1997 .

Photoluminescence of Fe-complexes in GaN

B. Meyer, R. Heitz, M. Kunzer, 1996 .

Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected magnetic resonance

H. Amano, I. Akasaki, M. Kunzer, 1997 .