Kouichi Iiyama

Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

K. Higashimine, S. Takamiya, Y. Kita, 2002 .

Mechanical stress caused by adsorption of O or N on a Ga-terminated (100) GaAs surface: O gives compressive stress but N don't

S. Miyamura, H. Seto, Kouichi Iiyama, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on a Wafer by Controlling pH of Pretreatment Chemicals: Effect of Oxygen Adsorption

T. Inokuma, S. Takamiya, Tomoyuki Sugimura, 2000 .

I–V Characteristics of Schottky/Metal-Insulator-Semiconductor Diodes with Tunnel Thin Barriers

S. Takamiya, Tomoyuki Sugimura, Tatsutoshi Tsuzuku, 2000 .

A preliminary study of MIS diodes with nm-thin GaAs-oxide layers

T. Inokuma, S. Takamiya, Tomoyuki Sugimura, 1999 .