W.J. Tsai

A New Interference Phenomenon in Sub-60nm Nitride-Based Flash Memory

C.H. Chen, T.C. Lu, W.P. Lu, 2007, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.

Reliability and device scaling challenges of trapping charge flash memories

Chih-Yuan Lu, Tahui Wang, T.C. Lu, 2004, Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).

A temperature accelerated model for high state retention loss of nitride storage flash memory

Chih-Yuan Lu, W.J. Tsai, A. Kuo, 2004, IEEE International Integrated Reliability Workshop Final Report, 2004.

A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

Chih-Yuan Lu, Tahui Wang, T.C. Lu, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

RTN modulation by neighboring word-line Vt level in 1Xnm floating gate NAND strings

Chih-Yuan Lu, Tahui Wang, Y.H. Chen, 2018, 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Highly scalable NAND-type PHINES flash memory for data flash applications

Chih-Yuan Lu, T.C. Lu, W.J. Tsai, 2006, 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.

A novel fully CMOS process compatible PREM for SOC applications

T.C. Lu, C.Y. Chin, W.J. Tsai, 2005, IEEE Electron Device Letters.

Investigation of Charge Loss in Cycled NBit Cells via Field and Temperature Accelerations

Chih-Yuan Lu, W.J. Tsai, J. Ku, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Data retention behavior of a SONOS type two-bit storage flash memory cell

Chih-Yuan Lu, C.C. Liu, W.J. Tsai, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Reliability models of data retention and read-disturb in 2-bit nitride storage flash memory cells

T.C. Lu, W.J. Tsai, C.C. Yeh, 2003, IEEE International Electron Devices Meeting 2003.

Cause of erase speed degradation during two-bit per cell operation of a trapping nitride storage flash memory cell

Chih-Yuan Lu, W.J. Tsai, J. Ku, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

T.C. Lu, W.J. Tsai, J. Ku, 2004, IEEE Electron Device Letters.

PHINES: a novel low power program/erase, small pitch, 2-bit per cell flash memory

Chih-Yuan Lu, T.C. Lu, W.J. Tsai, 2002, Digest. International Electron Devices Meeting,.