Abdallah Ougazzaden

发表

Modeling of AlN/GaN superlattices for integration in near-UV distributed Bragg reflectors

A. Zorila, J. Jacquet, Abdallah Ougazzaden, 2010, OPTO.

20-Gbit/s high-performance MQW TANDEM for soliton generation and coding

F. Huet, Guy Aubin, M. Carre, 1995 .

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

Suresh Sundaram, Ali Soltani, Abdallah Ougazzaden, 2016, Sensors.

Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

Ali Ahaitouf, S. Gautier, T. Moudakir, 2012, OPTO.

GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3

Abdallah Ougazzaden, Andrei Sirenko, A. Ougazzaden, 2006 .

40 Gb/s tandem electro-absorption modulator

Gregory Raybon, C. L. Reynolds, Mark S. Hybertsen, 2001, OFC 2001.

40 Gb/s photonic integrated receiver with -17 dBm sensitivity

Abdallah Ougazzaden, L.J.P. Ketelsen, C. W. Lentz, 2002, Optical Fiber Communication Conference and Exhibit.

BAlN thin layers for deep UV applications

Xin Li, Sophie Bouchoule, Gilles Patriarche, 2015 .

1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxy

Gilles Patriarche, Abdallah Ougazzaden, F. Devaux, 1997 .

MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications

Ian T. Ferguson, William E. Fenwick, Tahir Zaidi, 2008 .

Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz

F. Huet, M. Carre, Alain Carenco, 1992 .

Butt-coupled waveguide-modulators by low temperature embedded CBE regrowth for high speed modulation (42 GHz) or large extinction ratio (>50 db)

F. Huet, Abdallah Ougazzaden, F. Alexandre, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

Xin Li, Gilles Patriarche, Abdallah Ougazzaden, 2017, Scientific Reports.

Tandem of electroabsorption modulators integrated with a DFB laser and an optical amplifier for short optical pulse generation and coding

A. Ramdane, Abdallah Ougazzaden, F. Devaux, 1998 .

Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

Manijeh Razeghi, Cuong Ton-That, Ryan P McClintock, 2016 .

Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks

Abdallah Ougazzaden, Paul L Voss, Claire Berger, 2013, 1307.6197.

Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications

Abdallah Ougazzaden, Paul L. Voss, Yacine Halfaya, 2019, Advanced Materials Technologies.

Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

Joel Jacquet, Gilles Patriarche, M. Abid, 2013 .

Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP

A. Mircea, Abdallah Ougazzaden, C. Pautet, 1996 .

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Xin Li, Gilles Patriarche, Abdallah Ougazzaden, 2016 .

Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Xin Li, Abdallah Ougazzaden, Paul L. Voss, 2018, ACS Photonics.

Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis

Abderrahim Ramdane, Jean Decobert, Pierre-Yves Lagrée, 2008 .

Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs

Manijeh Razeghi, J. N. Chapman, T. Moudakir, 2015 .

Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates

Abdallah Ougazzaden, A. Ougazzaden, H. Dumont, 1999 .

Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine

Abdallah Ougazzaden, A. Ougazzaden, H. Dumont, 1999 .

Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN

Olivier Durand, Manijeh Razeghi, J. N. Chapman, 2007 .

Efficient polarization insensitive electroabsorption modulator using strained InGaAsP‐based quantum wells

Alain Carenco, P. Voisin, Abdallah Ougazzaden, 1994 .

High power operation of widely tunable 1.55 /spl mu/m distributed Bragg reflector laser

Abdallah Ougazzaden, F. Delorme, S. Grosmaire, 1997 .

Bandgap energy bowing parameter of strained and relaxed InGaN layers

Nicolas Fressengeas, T. Moudakir, G. Orsal, 2014 .

Zero‐loss multiple‐quantum‐well electroabsorption modulator with very low chirp

A. Mircea, Alain Carenco, A. Ramdane, 1994 .

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Sang-Hoon Bae, Xin Li, Yunbo Ou, 2018, Science.

High speed gain-switched laser as very simple 4/spl times/10 Gbit/s and up to 8/spl times/10 Gbit/s OTDM source

Eugen Lach, C. Kazmierski, Abdallah Ougazzaden, 1998, 24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).

Photonic integrated receiver for 40 Gbit/s transmission

Sethumadhavan Chandrasekhar, Abdallah Ougazzaden, Andrei Sirenko, 2002 .

Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

Badreddine Assouar, Abdelaziz Ahaitouf, T. Moudakir, 2011 .

Monolithic integration of strained layer multi-quantum well distributed feedback laser and external modulator by selective disordering

M. Carre, A. Ramdane, Abdallah Ougazzaden, 1994 .

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Abdallah Ougazzaden, Paul L. Voss, Xin Li, 2016 .

Investigation of carrier heating and spectral hole burning in semiconductor amplifiers by highly nondegenerate four‐wave mixing

Antonio Mecozzi, Paolo Spano, Abdallah Ougazzaden, 1994 .

Experimental optimisation of MQW electroabsorption modulators with up to 40 GHz bandwidths

F. Huet, M. Carre, Abdallah Ougazzaden, 1994 .