F. Schulz

发表

Model calculation of ion collection in the presence of sputtering

K. Wittmaack, F. Schulz, 1976 .

Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solids

K. Wittmaack, J. Maul, F. Schulz, 1973 .

The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon

K. Wittmaack, P. Blank, F. Schulz, 1976 .

Depth resolution in sputter profiling: Evidence against the sequential layer sputtering model

K. Wittmaack, F. Schulz, 1978 .

Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon

K. Wittmaack, J. Maul, F. Schulz, 1973 .

DETERMINATION OF IMPLANTATION PROFILES IN SOLIDS BY SECONDARY-ION MASS SPECTROMETRY.

K. Wittmaack, J. Maul, F. Schulz, 1972 .

Non-Gaussian range profiles in amorphous solids

K. Wittmaack, J. Maul, F. Schulz, 1973 .

Proton stopping cross sections for carbon, aluminium and gold: New experimental data and critical analysis of the validity of empirical fit formulas

J. Shchuchinsky, F. Schulz, 1985 .

Multiply peaked energy loss spectra of heavy ions transmitted through polycrystalline foils: An interpretation in terms of channeling

F. Schulz, W. Michael, 1984 .

Range Distributions of Boron in Silicon Dioxide and the Underlying Silicon Substrate

K. Wittmaack, B. Hietel, F. Schulz, 1975 .

Effective charge of low-velocity ions in matter: A comparison of theoretical predictions with data derived from energy-loss measurements

W. Brandt, F. Schulz, 1982 .

PIXE analysis of biomedical samples by means of an external proton beam

K. Wittmaack, B. Hietel, F. Schulz, 1984 .