L. Mathew

发表

Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

A. Vandooren, S. Egley, M. Zavala, 2002, 2002 IEEE International SOI Conference.

Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS.

J.G. Fossum, G.O. Workman, S. Kalpat, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Study of undoped channel FinFETs in active rail clamp ESD networks

L. Mathew, J.W. Miller, M.G. Khazhinsky, 2008, 2008 IEEE International Reliability Physics Symposium.

Multi gated device architectures advances, advantages and challenges

A. Vandooren, T. Stephens, M. Zavala, 2004, 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).

Integration challenges of new materials and device architectures for IC applications

M. Mendicino, A. Vandooren, Da Zhang, 2004, 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).

Substrate bias effects in SOI FinFETs

Sorin Cristoloveanu, Anne Vandooren, Jalal Jomaah, 2003 .

LP-HP nanoscale FinFET-CMOS design via source/drain engineering

J.G. Fossum, L. Mathew, S. Chouksey, 2008, 2008 IEEE International SOI Conference.

PC based biomedical signal acquisition

L. Mathew, C. K. Dwarakanath, 1995, Proceedings of the First Regional Conference, IEEE Engineering in Medicine and Biology Society and 14th Conference of the Biomedical Engineering Society of India. An International Meet.

A process/physics-based compact model for nonclassical CMOS device and circuit design

G. O. Workman, V. P. Trivedi, Meng-Hsueh Chiang, 2004 .

ITFET: Inverted T Channel FET, A Novel Device architecture and circuits based on the ITFET

J.G. Fossum, G.O. Workman, S. Kalpat, 2006, 2006 IEEE International Conference on IC Design and Technology.

Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors

J. Conner, S. Murphy, S. Venkatesan, 2006, 2006 International Electron Devices Meeting.

CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)

A. Vandooren, S. Kalpat, T. Stephens, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Carrier Mobility/Transport in Undoped-UTB DG FinFETs

L. Mathew, V. Trivedi, J. Fossum, 2007, IEEE Transactions on Electron Devices.

A Novel Two-Transistor Floating-Body Memory Cell

L. Mathew, W. Zhang, J.G. Fossum, 2007, 2007 IEEE International SOI Conference.

Physical insights regarding design and performance of independent-gate FinFETs

L. Mathew, J. Fossum, Weimin Zhang, 2005, IEEE Transactions on Electron Devices.

Finfet with isolated n+ and p+ gate regions strapped with metal and polysilicon

J. Conner, A. Vandooren, B. E. White, 2003, 2003 IEEE International Conference on SOI.

Threshold Voltage Adjustment in Nanoscale DG FinFETs Via Limited Source/Drain Dopants in the Channel

L. Mathew, S. Agrawal, J.G. Fossum, 2009, IEEE Transactions on Electron Devices.

Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions

J. Conner, A. Vandooren, S. Samavedam, 2003, IEEE Electron Device Letters.

Mixed-signal performance of sub-100nm fully-depleted SOI devices with metal gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

A. Vandooren, S. Samavedam, I. To, 2003, IEEE International Electron Devices Meeting 2003.

Performance and reliability of sub-100nm TaSiN metal gate fully-depleted SOI devices with high-k (HfO/sub 2/) gate dielectric

A. Vandooren, S. Murphy, I. To, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..