S. Dakshina-Murthy

Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

A. Vandooren, S. Egley, M. Zavala, 2002, 2002 IEEE International SOI Conference.

Metal gate MOSFETs with HfO/sub 2/ gate dielectric

P. Abramowitz, P.J. Tobin, E. Luckowski, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Metal gate MOSFETs with HfO2 gate dielectric

P. Abramowitz, David Gilmer, S. Bagchi, 2002, VLSIT 2002.

Dual-metal gate CMOS with HfO2 gate dielectric

P. Abramowitz, J. Conner, E. Luckowski, 2002, Digest. International Electron Devices Meeting,.

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

Bich-Yen Nguyen, Raghaw Rai, M. Zavala, 2003 .

Finfet with isolated n+ and p+ gate regions strapped with metal and polysilicon

J. Conner, A. Vandooren, B. E. White, 2003, 2003 IEEE International Conference on SOI.

CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates

Joe C. Campbell, S. Dakshina-Murthy, Sebastian Csutak, 2002 .