F. Zid

发表

Electronic structure calculations for Si/Si1−xGex multi-quantum well devices

J. Derrien, A. Bhouri, N. Bouarissa, 2003 .

Electric field effect on the spatially separated electron–hole recombination in an Si/Si1−xGex resonant tunneling heterostructure

J. Derrien, A. Bhouri, H. Mejri, 2002 .

Stark effect modeling in strained n-type Si/Si1−xGex resonant tunneling heterostructures

J. Derrien, A. Bhouri, F. d'Avitaya, 2002 .

Crystal structure of a [(dihydrogen pyrophosphato-K2O,O′) bis(1,10-phenanthroline-N, N′)nickel(II)]2.5-hydrate [Ni(H2P2O7)(C12H8N2)2]·2.5H2O

A. Driss, S. Cherni, F. Zid, 2016, Journal of Structural Chemistry.

Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1−xN

H. Belmabrouk, A. Bhouri, N. Bouarissa, 2004 .

Electronic band parameters for zinc-blende Al1?xGaxN

A. Bhouri, N. Bouarissa, H. Mejri, 2002 .

Electronic structure and optical properties of Si1−xGex alloys

J. Derrien, A. Bhouri, N. Bouarissa, 2002 .

Wave function engineering in W designed strained-compensated Si/Si1-xGex/Si type II quantum wells for 1.55μm optical properties

A. Bhouri, N. Sfina, M. Said, 2005 .