G.A.M. Hurkx

On the modelling of downscaled bipolar transistors

G.A.M. Hurkx, 1990 .

Architecture de mémoire à changement de phase (PCM) et procédé pour écrire dans une architecture de PCM

G.A.M. Hurkx, Maurits Mario Nicolaas Storms, Bussel Erik Maria Van, 2012 .

QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications

G.A.M. Hurkx, L.F. Tiemeijer, J.C.J. Paasschens, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

QUBiC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment

G.A.M. Hurkx, R. van Langevelde, T. Vanhoucke, 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

An improved analytical description of the effect of velocity saturation on the collector current of a bipolar transistor

G.A.M. Hurkx, 1992 .

The relevance of f/sub T/ and f/sub max/ for the speed of a bipolar CE amplifier stage

G.A.M. Hurkx, 1996, Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells

R. Delhougne, G.A.M. Hurkx, L. Goux, 2007, 2007 IEEE International Electron Devices Meeting.