Daehwan Kim

发表

Effect of Channel Layer Thickness on Electrical and Thermal Stabilities of High-Mobility Zinc Oxynitride Thin-Film Transistors

H. Kwon, Min-Jae Park, Daehwan Kim, 2017 .

P‐201L: Late‐News Poster: Threshold Voltage Shift under Bias Temperature Stress of Amorphous Indium Gallium Zinc Oxide TFTs

Yongkee Hwang, Chang-Dong Kim, I. Chung, 2010 .

Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

H. Kwon, Hyun-Seok Cha, Min-Gyu Shin, 2020, Materials.

Low temperature carrier transport mechanism in high-mobility zinc oxynitride thin-film transistors

H. Kwon, Hee-Joong Kim, Hwan-Seok Jeong, 2017 .

Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors

Sunhee Lee, H. Kwon, Hyun-Suk Kim, 2016, IEEE Electron Device Letters.

Effects of proton beam irradiation on the physical and chemical properties of IGTO thin films with different thicknesses for thin-film transistor applications

H. Kwon, Hyun-Seok Cha, Min-Gyu Shin, 2021 .

Effects of Post-Deposition Thermal Annealing Temperature on Electrical Properties of ZnON Thin-Film Transistors

H. Kwon, Hun Jeong, Chan-Yong Jeong, 2016, IEEE Electron Device Letters.

Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor

Jae Kyeong Jeong, Seungwu Han, W. Shin, 2014, Scientific Reports.

Determination of Interface and Bulk Trap Densities in High-Mobility p-type WSe2 Thin-Film Transistors

H. Kwon, Chan-Yong Jeong, Hee-Joong Kim, 2017, IEEE Electron Device Letters.

DC Versus Pulse-Type Negative Bias Stress Effects on the Instability of Amorphous InGaZnO Transistors Under Light Illumination

Youn-Gyoung Chang, S. Im, H. Lee, 2011, IEEE Electron Device Letters.

P‐20: Highly Stable Amorphous Indium Gallium Zinc Oxide Thin‐Film Transistors with N2O Plasma Treatment

Sung Ki Kim, Myungchul Jun, Seungchan Choi, 2011 .

Trap Density of States Measured by Photon Probe on Amorphous-InGaZnO Thin-Film Transistors

Kimoon Lee, Youn-Gyoung Chang, S. Im, 2011, IEEE Electron Device Letters.

Reliable Bottom Gate Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors with TiOx Passivation Layer

J. Myoung, I. Kang, I. Chung, 2009 .

Effect of Silicon Doping on the Electrical Performance of Amorphous SiInZnO Thin-film Transistors

Sungkyun Park, H. Kwon, Sangsig Kim, 2021, Transactions on Electrical and Electronic Materials.

Electrical Performance and Stability Improvement of p-Channel SnO Thin-Film Transistors Using Atomic-Layer-Deposited Al₂O₃ Capping Layer

Hyuck-In Kwon, Seong-Hyun Hwang, Kang-Hwan Bae, 2020, IEEE Access.

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

Jae Kyeong Jeong, R. Choi, M. Jang, 2011 .

Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics

Sunhee Lee, H. Kwon, Myeong-Ho Kim, 2021, Coatings.

Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium–Gallium–Tin Oxide Thin-Film Transistors

H. Kwon, Hyun-Seok Cha, Hwan-Seok Jeong, 2021, Electronics.

5‐2: Gate Driver Circuits for Internal Compensation Type OLED Display with High Mobility Oxide TFT

Y. Jang, I. Kang, S. Yoon, 2018 .

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Hyun-Yong Lee, H. Kwon, I. Park, 2022, ACS Applied Electronic Materials.

Quantitative Analysis of Positive-Bias-Stress-Induced Electron Trapping in the Gate Insulator in the Self-Aligned Top Gate Coplanar Indium–Gallium–Zinc Oxide Thin-Film Transistors

Sunhee Lee, H. Kwon, Myeong-Ho Kim, 2021, Coatings.

Separate Extraction of Densities of Interface and Bulk Trap States in High-Mobility ZnON Thin-Film Transistors

H. Kwon, Min-Jae Park, Daehwan Kim, 2017 .

Impact of High-k HfO2 Dielectric on the Low-Frequency Noise Behaviors in Amorphous InGaZnO Thin Film Transistors

Changjung Kim, H. Kwon, Jae-Chul Park, 2010 .

Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors

Sunhee Lee, Joonsuk Park, H. Kwon, 2016, IEEE Electron Device Letters.

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

H. Kwon, Hyun-Seok Cha, Min-Gyu Shin, 2020, Micromachines.

High-Gain Complementary Inverter Based on Corbino p-Type Tin Monoxide and n-Type Indium-Gallium-Zinc Oxide Thin-Film Transistors

H. Kwon, Ha-Yun Jeong, Xiaoshi Jin, 2019, IEEE Electron Device Letters.

P‐3: A Study on the Hot Carrier Effect in InGaZnO Thin Film Transistors

Inbyeong Kang, Hara Kang, S. Yoon, 2019, SID Symposium Digest of Technical Papers.

Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films

Dae-Hwan Kim, Hyo-Jun Joo, Hyun-Seok Cha, 2020, Micromachines.

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

S. Lee, H. Kwon, Ha-Yun Jeong, 2019, Scientific Reports.

7‐4: Invited Paper: Internal Compensation Type OLED Display Using High Mobility Oxide TFT

Y. Jang, I. Kang, S. Yoon, 2017 .

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

H. Kwon, Hwan-Seok Jeong, Daehwan Kim, 2017, Nanotechnology.

Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors

Dae Hwan Kim, Chang-Woo Song, Yong-Jin Choi, 2016 .

Wheatstone bridge based offset cancelling method utilizing a JFET as a voltage-controlled resistor

H. Kwon, Hyun-Seok Cha, Sang-Hun Song, 2021, Measurement.

Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx films

Jae Kyeong Jeong, R. Choi, Hong Yoon Jung, 2013, IEEE Electron Device Letters.

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

S. Lee, H. Kwon, Ha-Yun Jeong, 2019, Scientific Reports.

Effects of oxygen flow rate on the electrical stability of zinc oxynitride thin-film transistors

H. Kwon, Chan-Yong Jeong, Sang-Hun Song, 2017 .

P.62: Effects of Amorphous InGaZnO Thin Film Transistors with Various Buffer Layers on Polyimide Substrate Under Negative Bias‐temperature Stresses

Jin-seong Park, C. Hwang, B. Chin, 2013 .