E. Kitagawa

Progress of STT-MRAM technology and the effect on normally-off computing systems

H. Noguchi, K. Abe, S. Fujita, 2012, 2012 International Electron Devices Meeting.

Novel Nonvolatile L1/L2/L3 Cache Memory Hierarchy Using Nonvolatile-SRAM With Voltage-Induced Magnetization Switching and Ultra Low-Write-Energy MTJ

Shinobu Fujita, H. Noguchi, K. Abe, 2013, IEEE Transactions on Magnetics.

MTJ-based "normally-off processors" with thermal stability factor engineered perpendicular MTJ, L2 cache based on 2T-2MTJ cell, L3 and last level cache based on 1T-1MTJ cell and novel error handling scheme

H. Noguchi, K. Abe, S. Fujita, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Low power and high density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques

H. Noguchi, K. Abe, S. Fujita, 2014, 2014 IEEE International Electron Devices Meeting.

Novel hybrid DRAM/MRAM design for reducing power of high performance mobile CPU

H. Noguchi, K. Abe, S. Fujita, 2012, 2012 International Electron Devices Meeting.

Improvement of robustness against write disturbance by novel cell design for high density MRAM

M. Yoshikawa, Y. Fukuzumi, S. Tahara, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Future prospects of MRAM technologies

Y. Suzuki, H. Noguchi, S. Fujita, 2013, 2013 IEEE International Electron Devices Meeting.

Ion-Beam-Etched Profile Control of MTJ Cells for Improving the Switching Characteristics of High-Density MRAM

M. Yoshikawa, Y. Asao, T. Kai, 2006, IEEE Transactions on Magnetics.

Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes

T. Daibou, M. Yoshikawa, E. Kitagawa, 2008, IEEE Transactions on Magnetics.

A 4ns, 0.9V write voltage embedded perpendicular STT-MRAM fabricated by MTJ-Last process

H. Noguchi, S. Fujita, K. Kushida, 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).