G. Bruguier

The effect of layout modification on latchup triggering in CMOS by experimental and simulation approaches

Robert Ecoffet, J. Gasiot, H. de la Rochette, 1994 .

Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

Robert Ecoffet, J. Gasiot, C. Tavernier, 1999 .

arge sitive Area I A ~~bmicr~n C

J. Gasiot, Eric Lorfevre, G. Bruguier, 1997 .

Single Particle-Induced Late

G. Bruguier, G. Bruguier, 1996 .

SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain

Robert Ecoffet, J. Gasiot, G. Bruguier, 1998 .

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

J. Gasiot, G. Bruguier, J.-M. Palau, 1994 .

The latchup risk of CMOS-technology in space

Robert Ecoffet, J. Gasiot, G. Bruguier, 1993 .

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

J. Gasiot, G. Bruguier, J.-M. Palau, 1995 .

Cell design modifications to harden an N-channel power IGBT against single event latchup

Robert Ecoffet, J. Gasiot, Eric Lorfevre, 1999 .

Single particle-induced latchup

G. Bruguier, J.-M. Palau, G. Bruguier, 1996 .

Influence of parasitic transistors on the total dose hardness of MOS and MOS/SOI structures

F. Roy, G. Bruguier, J.-C. Boudenot, 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.