Y. C. Kuo

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

J. L. Kuo, E. R. Hsieh, Steve S. Chung, 2017, 2017 Symposium on VLSI Technology.

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak Path

J. L. Kuo, T. P. Chen, Y. C. Kuo, 2017, IEEE Transactions on Electron Devices.

Ferroelectric of HfO2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors

K. C. Lin, Y. C. Kuo, P. C. Juan, 2017, Microelectron. Reliab..