P. F. Lugakov

发表

Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types

L. A. Kazakevich, P. F. Lugakov, 1998 .

The role of dislocations during charge-carrier recombination at radiation defects in p-Si

L. A. Kazakevich, P. F. Lugakov, I. M. Filippov, 1989 .

The Charge Carrier Recombination Processes in Dislocated Silicon

L. A. Kazakevich, P. F. Lugakov, I. M. Filippov, 1986 .

Peculiarities of charge carrier recombination at radiation defects in dislocated silicon

L. A. Kazakevich, P. F. Lugakov, I. M. Filippov, 1985 .

A Model of Nonequilibrium Charge-Carrier Recombination in Semiconductors Containing Nonuniformities

P. F. Lugakov, V. V. Shusha, 1984, November 16.

Charge‐carrier recombination in silicon irradiated with γ‐rays of different energies

P. F. Lugakov, V. V. Shusha, I. I. Kolkovskii, 1984 .

Statistics of charge carrier recombination at radiation defect clusters in silicon

P. F. Lugakov, V. V. Shusha, 1982 .

Nature and parameters of radiation defects in epitaxial layers of silicon

V. Kuznetsov, A. V. Tsikunov, P. F. Lugakov, 1987 .

On the nature of the radiation defects with level Ec–0.22 eV in n-type silicon

V. Kuznetsov, L. A. Kazakevich, P. F. Lugakov, 1985 .

Interaction of radiation defects with the surface of silicon

V. Kuznetsov, A. V. Tsikunov, P. F. Lugakov, 1984 .

The electrical activity of tetravacancy complexes in high-energy proton-irradiated silicon

V. Kuznetsov, P. F. Lugakov, 1984 .

The effect of irradiation and heat treatment on the dislocation recombination activity in n-type silicon

L. A. Kazakevich, P. F. Lugakov, I. M. Filippov, 1990 .

Formation of thermal donors during annealing of radiation defects in float-zone dislocation-free n-Si

P. F. Lugakov, V. V. Shusha, I. I. Kolkovskii, 1990 .

Nature and parameters of radiation defects in dislocated silicon

L. A. Kazakevich, P. F. Lugakov, 1985 .

Efficiency of Radiation Defect Formation in Silicon at Various Intensities of Electron and γ-Ray Irradiation

P. F. Lugakov, V. V. Lukyanitsa, 1984, June 16.

The Effect of Dislocations on the Radiation Defect Annealing Processes in Silicon

L. A. Kazakevich, P. F. Lugakov, 1982 .

Study of Rearrangements of Intrinsic Defects at Annealing of Proton‐Irradiated Silicon

V. Kuznetsov, P. F. Lugakov, 1982 .

The Effect of Dislocations on the Formation of Radiation Defects in Silicon

L. A. Kazakevich, P. F. Lugakov, 1982, May 16.

Study of Radiation Defect Clusters, Their Structure and Properties in, Proton-Irradiated Silicon

V. Kuznetsov, P. F. Lugakov, 1982, April 16.

Radiation defect clusters in electron-irradiated silicon

P. F. Lugakov, I. M. Filippov, 1985 .

Peculiarities of radiation defect accumulation under high-flux γ-ray and electron irradiation of silicon

P. F. Lugakov, T. A. Lukashevich, 1988 .

The efficiency of direct annihilation of resistivity silicon primary radiation defects in high-resistivity silicon

P. F. Lugakov, T. A. Lukashevich, 1989 .

Interaction of radiation defects of different nature in n-Si at irradiation and annealing

V. V. Lukjanitsa, P. F. Lugakov, 1984 .

Parameters of Defect Clusters in Irradiated Silicon and a Method for Their Determining

V. Kuznetsov, P. F. Lugakov, 1983, October 16.

Phosphorus-divacancy complexes in irradiated silicon

L. A. Kazakevich, P. F. Lugakov, I. M. Filippov, 1988 .

Nature of the Defect Determining the Fermi Level Stabilization in Irradiated Silicon

P. F. Lugakov, V. V. Shusha, T. A. Lukashevich, 1982 .

Influence of irradiation temperature on radiation defect accumulation in silicon

V. Kuznetsov, P. F. Lugakov, V. V. Lukyanitsa, 1988 .