Jung-Suk Goo

RF noise simulation for submicron MOSFET's based on hydrodynamic model

R.W. Dutton, E. Morifuji, H.S. Momose, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

Switching-mode dependence of inductive noise in VLSI power bus lines

S. Hale, A.B. Icel, Jung-Suk Goo, 2004, IEEE Electron Device Letters.

Scalability of strained-Si nMOSFETs down to 25 nm gate length

Jung-Suk Goo, M. Bulsara, M. Currie, 2003, IEEE Electron Device Letters.

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

Jung-Suk Goo, Chang-Hoon Choi, Zhiping Yu, 1999, IEEE Electron Device Letters.

Physical origin of the excess thermal noise in short channel MOSFETs

Jung-Suk Goo, Chang-Hoon Choi, Zhiping Yu, 2001, IEEE Electron Device Letters.

Band offset induced threshold variation in strained-Si nMOSFETs

P. Besser, Jung-Suk Goo, Y. Takamura, 2003, IEEE Electron Device Letters.

C-V and gate tunneling current characterization of ultra-thin gate oxide MOS (t/sub ox/=1.3-1.8 nm)

Jung-Suk Goo, Chang-Hoon Choi, Zhiping Yu, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

Direct tunneling current model for circuit simulation

Jung-Suk Goo, Chang-Hoon Choi, Zhiping Yu, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Extending two-element capacitance extraction method toward ultraleaky gate oxides using a short-channel length

Jung-Suk Goo, A. Icel, K. Wieczorek, 2004, IEEE Electron Device Letters.

The effect of annealing temperatures on self-aligned replacement (damascene) TaCN-TaN-stacked gate pMOSFETs

Jung-Suk Goo, Qi Xiang, J. Xie, 2004, IEEE Transactions on Electron Devices.