Haruki Yokoyama

发表

Toward improving ability to repair bugs automatically: a patch candidate location mechanism using code similarity

Shinji Kusumoto, Yoshiki Higo, Keisuke Hotta, 2016, SAC.

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Kazuo Watanabe, Hiroki Sugiyama, 2002, Microelectron. Reliab..

SAW characteristics of GaN layers with surfaces exposed by dry etching

Naoteru Shigekawa, Haruki Yokoyama, Kazumi Nishimura, 2005, IEICE Electron. Express.

Insulator engineering in GaN-based MIS HFETs

Toshiki Makimoto, Noriyuki Watanabe, Haruki Yokoyama, 2007, SPIE OPTO.

Cellomics approach for high-throughput functional annotation of Caenorhabditis elegans neural network

Mitsuyoshi Ueda, Haruki Yokoyama, Wataru Aoki, 2017, Scientific Reports.

Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors

Takashi Kobayashi, Hideaki Matsuzaki, Hiroki Sugiyama, 2004, IEICE Electron. Express.

Evaluating Automated Program Repair Using Characteristics of Defects

Shinji Kusumoto, Yoshiki Higo, Haruki Yokoyama, 2017, 2017 8th International Workshop on Empirical Software Engineering in Practice (IWESEP).

Toward Developer-like Automated Program Repair — Modification Comparisons between GenProg and Developers

Shinji Kusumoto, Yoshiki Higo, Hiroki Nakajima, 2016, 2016 23rd Asia-Pacific Software Engineering Conference (APSEC).

Highperformance 0.1μm gate enhancementmode inalas/ingaas hemt's using twostep recessed gate technology

Tetsuya Suemitsu, Yohtaro Umeda, Haruki Yokoyama, 1999 .

Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates

Naoteru Shigekawa, Haruki Yokoyama, Kazumi Nishimura, 2005, IEICE Electron. Express.

High-speed avalanche photodiodes for 100-Gb/s systems and beyond

Hideaki Matsuzaki, Masahiro Nada, Toshihide Yoshimatsu, 2014, 2014 The European Conference on Optical Communication (ECOC).

49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs

Takatomo Enoki, K. Osafune, Yohtaro Umeda, 1999 .

New Strategies for Selecting Reuse Candidates on Automated Program Repair

Shinji Kusumoto, Yoshiki Higo, Masahiro Yamamoto, 2017, 2017 IEEE 41st Annual Computer Software and Applications Conference (COMPSAC).

Novel methodology for high-throughput annotation of neural circuits

Mitsuyoshi Ueda, Wataru Aoki, Haruki Yokoyama, 2016 .

Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2012, IEICE Electron. Express.

Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2012, IEICE Trans. Electron..

Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures

Takatomo Enoki, Toshiki Makimoto, Noriyuki Watanabe, 2007 .

Silica-based PLC with heterogeneously-integrated PDs for one-chip DP-QPSK receiver

Shinichi Aozasa, Takayuki Mizuno, Yoshifumi Muramoto, 2012, 2012 38th European Conference and Exhibition on Optical Communications.

Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2010 .

30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

Tetsuya Suemitsu, Toshiaki Tamamura, Takatomo Enoki, 1999 .

Temperature Dependence of Surface Acoustic Wave Characteristics of GaN Layers on Sapphire Substrates

Naoteru Shigekawa, Haruki Yokoyama, Kazumi Nishimura, 2005 .

Design and Performance of High-Speed Avalanche Photodiodes for 100-Gb/s Systems and Beyond

Hideaki Matsuzaki, Masahiro Nada, Toshihide Yoshimatsu, 2015, Journal of Lightwave Technology.

Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (∼200 µW) Using Offset-Fed Slot Antenna and High Current Density

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2009 .

Compact and high-sensitivity 100-Gb/s (4 × 25 Gb/s) APD-ROSA with a LAN-WDM PLC demultiplexer.

Yoshiyuki Doi, Ikuo Ogawa, Masahiro Nada, 2012, Optics express.

InAlAs APD with high multiplied responsivity-bandwidth product (MR-bandwidth product) of 168 A/W.GHz for 25 Gbit/s high-speed operations

Masahiro Nada, Yoshifumi Muramoto, Tadao Ishibashi, 2012 .

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Kenji Kurishima, Noriyuki Watanabe, Haruki Yokoyama, 2005 .

MOCVD-grown compressively strained C-doped InxGa1−xAs1−ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs

Hideaki Matsuzaki, Takuya Hoshi, Hiroki Sugiyama, 2014 .

Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2009 .

Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition

Koichi Maezawa, Haruki Yokoyama, Masafumi Yamamoto, 1998 .

30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

Tetsuya Suemitsu, Gaudenzio Meneghesso, Enrico Zanoni, 2002 .

Extremely High Peak Current Densities of over 1×106 A/cm2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2010 .

Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile

Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, 2012 .

Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2010 .

MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content

Akio Yamamoto, Naoteru Shigekawa, Noriyuki Watanabe, 2012 .

High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Side-gate effects on transfer characteristics in GaN-based transversal filters

Naoteru Shigekawa, Haruki Yokoyama, Kazumi Nishimura, 2005 .

Heterogeneously Integrated PLC With Low-Loss Spot-Size Converter and Newly Developed Waveplate PBS for DC-DP-16QAM Receiver

Shinichi Aozasa, Hiroshi Yamazaki, Mikitaka Itoh, 2015, Journal of Lightwave Technology.

Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2005 .

Silica-based PLC with heterogeneously-integrated PDs for one-chip DP-QPSK receiver

Shinichi Aozasa, Takayuki Mizuno, Yoshifumi Muramoto, 2012 .

Over-60-GHz design technology for an SCFL dynamic frequency divider using InP-based HEMTs

Yohtaro Umeda, Takatomo Enoki, K. Osafune, 1998 .

High-sensitivity 25 Gbit/s avalanche photodiode receiver optical sub-assembly for 40 km transmission

Masahiro Nada, Yoshifumi Muramoto, Tadao Ishibashi, 2012 .

Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers

Hideaki Matsuzaki, Hiroki Sugiyama, Takatomo Enoki, 2005 .

Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors

Tetsuya Suemitsu, Takatomo Enoki, Haruki Yokoyama, 1998 .

Influence of InGaN/GaN multiple quantum well structure on photovoltaic characteristics of solar cell

Naoteru Shigekawa, Noriyuki Watanabe, Haruki Yokoyama, 2014 .

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Toshihiko Kosugi, Masami Tokumitsu, Hiroki Sugiyama, 2007 .

Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

Noriyuki Watanabe, Haruki Yokoyama, Yasuhiro Oda, 2004 .

High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology

Tetsuya Suemitsu, Yohtaro Umeda, Takatomo Enoki, 1999 .

High Output Power (∼400 µW) Oscillators at around 550 GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2011 .

Increase of fundamental oscillation frequency in resonant tunneling diode with thin barrier and graded emitter structures

Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, 2010, 35th International Conference on Infrared, Millimeter, and Terahertz Waves.

Suppression of space charge effect in MIC-PD using composite field structure

Toshihide Yoshimatsu, Tomofumi Furuta, Yoshifumi Muramoto, 2010 .