B. Mueller

300mm Heterogeneous 3D Integration of Record Performance Layer Transfer Germanium PMOS with Silicon NMOS for Low Power High Performance Logic Applications

G. Dewey, B. Chu-Kung, J. Kavalieros, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

3D heterogeneous integration of high performance high-K metal gate GaN NMOS and Si PMOS transistors on 300mm high-resistivity Si substrate for energy-efficient and compact power delivery, RF (5G and beyond) and SoC applications

M. Radosavljevic, H. Then, W. Rachmady, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).