A. Brown

Enriched residual free bubbles for semiconductor device simulation

A. Asenov, R. Simpson, S. Bordas, 2012, Computational Mechanics.

Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

A. Asenov, N. Seoane, A. Martinez, 2009, IEEE Transactions on Electron Devices.

Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-Equilibrium Greens Function calibration

Andrew R. Brown, A. Asenov, M. Anantram, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor

A. Asenov, J. Barker, A. Martinez, 2008, 2008 IEEE Silicon Nanoelectronics Workshop.

Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs

S. Saini, A. Asenov, J. H. Davies, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Simulation of combined sources of intrinsic parameter fluctuations in a 'real' 35 nm MOSFET

A. Asenov, F. Adamu-Lema, G. Roy, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

A. Asenov, C. Riddet, C. Alexander, 2007, IEEE Transactions on Nanotechnology.