B. Yang

GeSn channel nMOSFETs: Material potential and technological outlook

B. Douhard, K. Saraswat, A. Franquet, 2012, 2012 Symposium on VLSI Technology (VLSIT).

5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications

Jun He, R. Chen, Geoffrey Yeap, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs

R. Degraeve, D. Lin, N. Collaert, 2012, 2012 International Electron Devices Meeting.