S. Shin

Enhancement-mode 130 nm InAs p-HEMTs having fT of 403 GHz and fmax of 470 GHz fabricated using atomic-layer-etching technology

D. Kim, T. Kim, G. Yeom, 2008, 2008 Device Research Conference.

High-performance III–V devices for future logic applications

D-H Kim, J. A. del Alamo, T-W Kim, 2014, 2014 IEEE International Electron Devices Meeting.