Bratina

发表

Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001).

Baroni, Franciosi, Peressi, 1994, Physical review. B, Condensed matter.

Local interface composition and band discontinuities in heterovalent heterostructures.

Baroni, Mula, Franciosi, 1994, Physical review letters.

Structure and local dipole of Si interface layers in AlAs-GaAs heterostructures.

Franciosi, Tapfer, Migliori, 1992, Physical review. B, Condensed matter.

Phonons in Si/GaAs superlattices.

Franciosi, Molinari, Spagnolo, 1992, Physical review. B, Condensed matter.

Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures.

Baroni, Franciosi, Baldereschi, 1992, Physical review letters.

AlAs-GaAs heterojunction engineering by means of group-IV elemental interface layers.

Franciosi, Sorba, Bratina, 1992, Physical review. B, Condensed matter.

Band offsets and strain in CdTe-GaAs heterostructures.

Franciosi, Gerberich, Sorba, 1993, Physical review. B, Condensed matter.

Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles.

Walker, Franciosi, Sorba, 1991, Physical review. B, Condensed matter.

Cross-sectional lateral-force microscopy of semiconductor heterostructures and multiple quantum wells.

Franciosi, Vanzetti, Bratina, 1995, Physical review. B, Condensed matter.