Biasiol

Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001).

Baroni, Franciosi, Peressi, 1994, Physical review. B, Condensed matter.

Nonmagnetic-semimagnetic semiconductor heterostructures: Ge-Cd1-xMnxTe(110).

Franciosi, Troullier, Yu., 1993, Physical review. B, Condensed matter.

Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures.

Baroni, Franciosi, Baldereschi, 1992, Physical review letters.

AlAs-GaAs heterojunction engineering by means of group-IV elemental interface layers.

Franciosi, Sorba, Bratina, 1992, Physical review. B, Condensed matter.

Band offsets and strain in CdTe-GaAs heterostructures.

Franciosi, Gerberich, Sorba, 1993, Physical review. B, Condensed matter.