H. Cheng

发表

Low-threshold buried-ridge II-VI laser diodes

S. Guha, M. Haase, G. Hofler, 1993 .

Degradation of II‐VI based blue‐green light emitters

Supratik Guha, Michael A. Haase, S. Guha, 1993 .

Low‐temperature growth of ZnSe by molecular beam epitaxy using cracked selenium

J. E. Potts, M. Haase, J. M. Depuydt, 1990 .

〈100〉 dark line defect in II‐VI blue‐green light emitters

Supratik Guha, Michael A. Haase, G. E. Hofler, 1994 .

Dependence of the density and type of stacking faults on the surface treatment of the substrate and growth mode in ZnSxSe1−x/ZnSe buffer layer/GaAs heterostructures

L. Salamanca-Riba, G. Hofler, J. M. Depuydt, 1995 .

Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II‐VI heterostructures and devices

Supratik Guha, Michael A. Haase, G. E. Hofler, 1993 .

Photodegradation of CdxZn1−xSe quantum wells

S. Guha, M. Haase, G. Hofler, 1995 .

Heavily doped p-ZnSe:N grown by molecular beam epitaxy

M. Haase, J. M. Depuydt, J. Qiu, 1991 .

Electrical characterization of p‐type ZnSe

J. E. Potts, M. Haase, J. M. Depuydt, 1989 .

WIDE BAND GAP MGZNSSE GROWN ON (001) GAAS BY MOLECULAR BEAM EPITAXY

S. Guha, L. Salamanca-Riba, M. Haase, 1995 .

Molecular beam epitaxial growth of CdZnS using elemental sources

S. Guha, M. Haase, J. Qiu, 1993 .

Microstructure and pseudomorphism in molecular beam epitaxially grown ZnCdS on GaAs(001)

S. Guha, J. M. Depuydt, B. J. Wu, 1993 .

ZnSe‐ZnSSe electro‐optic waveguide modulators

T. Strand, M. Haase, D. Misemer, 1991 .

Electromigration in p‐type ZnSe:Li

J. E. Potts, M. Haase, J. M. Depuydt, 1991 .

Composition modulation in lattice matched Zn1−xMgxSySe1−y/ZnSe buffer layer/GaAs heterostructures

S. Guha, L. Salamanca-Riba, M. Haase, 1994 .