Kurt H. Weiner

Manufacturing process for integrated circuits with reduced dimension

Somit Talwar, Karl-Josef Kramer, Guarav Verma, 1998 .

Doping of and outdiffusion from tungsten silicide films using gas immersion laser doping

Karl-Josef Kramer, Kurt H. Weiner, Emi Ishida, 1993, Other Conferences.

Laser thermal processing for shallow junction and silicide formation

Gaurav Verma, Somit Talwar, Kurt H. Weiner, 1998, Advanced Lithography.

Bipolar Transistor Fabrication Using Gas Immersion Laser Doping

Kurt H. Weiner, Thomas W. Sigmon, T. Sigmon, 1989, Photonics West - Lasers and Applications in Science and Engineering.

Fabrication of sub-40-nm p-n junctions for 0.18-μm MOS device applications using a cluster-tool-compatible, nanosecond thermal doping technique

Kurt H. Weiner, Anthony M. McCarthy, A. McCarthy, 1993, Other Conferences.

Ultra-shallow, abrupt, and highly-activated junctions by low-energy ion implantation and laser annealing

Somit Talwar, Kurt H. Weiner, G. Verma, 1998, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).

An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication

A. M. McCarthy, Kurt H. Weiner, T. W. Sigmon, 1993 .