P. Kae-Nune

Mass spectrometry detection of radicals in SiH4-CH4-H2 glow discharge plasmas

J. Perrin, J. Jolly, J. Guillon, 1995 .

Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges

Jean Guillon, Masaharu Shiratani, J. Perrin, 1998 .

Surface recombination probabilities of H on stainless steel, a-Si:H and oxidized silicon determined by threshold ionization mass spectrometry in H2 RF discharges

J. Perrin, J. Jolly, J. Guillon, 1996 .

Mass Spectrometry Detection of SiHm and CHm Radicals from SiH4–CH4–H2 RF Discharges under High Temperature Deposition Conditions of Silicon Carbide

J. Perrin, P. Kae-Nune, Jean Guillon Jean Guillon, 1994 .

Strain relaxation of Ga/sub 0.2/In/sub 0.8/As and InAs/sub 0.5/P/sub 0.5/ layers grown on InP substrate for 1.6 to 2.4 /spl mu/m spectral range Ga/sub x/In/sub 1-x/As/InAs/sub y/P/sub 1-y//InP photodiodes application

C. Brylinski, M. di Forte-Poisson, J. di Persio, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.