Xu Zheng

发表

Metalorganic vapor-phase epitaxy of β-(Al Ga1-)2O3 on (2¯ 0 1) Ga2O3 substrates

B. Cheng, Chuanbo Li, Y. Zuo, 2023, Journal of Crystal Growth.

Investigation of {111}A and {111}B planes of c-GaN epilayers grown on GaAs(001) by MOCVD

Hui Yang, Y. Wang, B. Qu, 2001 .

Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates

J. Han, Hui Yang, Xinhe Zheng, 2001 .

Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition

Hui Yang, Y. Sun, Dongshan Zhao, 2001 .

Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure

Hui Yang, Y. Wang, B. Qu, 2001 .

X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates

H. Yang, Xiaoming Shen, Yushun Wang, 2003 .

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

Hui Yang, Q. Jia, Xin Jiang, 2002 .

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

H. Yang, J. Zhou, H. Chen, 2003 .