T. Kimura

发表

Luminescence of Rare Earth Doped Porous Silicon

R. Saito, T. Ikoma, T. Kimura, 1996 .

Humidity‐sensitive threshold switching in silver–boron nitride–silicon–aluminum sandwiches

Katsumi Yamamoto, S. Yugo, T. Kimura, 1978 .

Generation of diamond nuclei by electric field in plasma chemical vapor deposition

T. Muto, S. Yugo, T. Kanai, 1991 .

Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm

Toshiaki Ikoma, Riichiro Saito, R. Saito, 1994 .

Self-assembled infrared-luminescent Er–Si–O crystallites on silicon

M. D. Dood, A. Polman, Tadamasa Kimura, 2004 .

Structure and annealing properties of silicon carbide thin layers formed by implantation of carbon ions in silicon

S. Yugo, Shigeru Kagiyama, T. Kimura, 1981 .

Optical characterization of Er-implanted ZnO films formed by sol–gel method

R. Saito, Tadamasa Kimura, T. Fukudome, 2003 .

Formation of silicon carbide layers by the ion beam technique and their electrical properties

Y. Adachi, S. Yugo, Songtao Zhou, 1989 .

Effects of the Subsequent Ion Irradiation on the Formation Process of β-SiC from Si-C Mixtures Fabricated on Si by Ion Implantation

Y. Adachi, S. Yugo, T. Kimura, 1987 .

Thermoelectric Power of Boron Phosphide at High Temperatures

S. Yugo, T. Kimura, 1980, May 16.

ESR of pyro-graphite irradiated by ions—II. High energy ion bombardments

Y. Kazumata, S. Yugo, Y. Nakano, 1986 .

Nucleation mechanisms of diamond in plasma chemical vapor deposition

Tadamasa Kimura, S. Yugo, T. Kanai, 1993 .

A new method for the generation of diamond nuclei by plasma CVD

S. Yugo, T. Kanai, T. Kimura, 1992 .

Single-photon interference experiment over 100 km for quantum cryptography system using balanced gated-mode photon detector

A. Tomita, H. Kosaka, Kazuo Nakamura, 2003, quant-ph/0306066.

Single-photon Interference over 150 km Transmission Using Silica-based Integrated-optic Interferometers for Quantum Cryptography

Akihisa Tomita, Yoshihiro Nambu, Hideo Kosaka, 2004, quant-ph/0403104.

A study on ion-irradiation damage of graphite surface

Y. Kazumata, S. Yugo, T. Kimura, 1985 .

Ion Implantation of Carbon and Neon Ions in Pyrolytic Graphite

S. Yugo, T. Kimura, 1983 .

Defect‐enhanced interdiffusion at the InGaAs/InAlAs interface due to Si ion implantation

R. Saito, T. Kamiya, M. Murata, 1994 .

Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces

R. Saito, M. Saito, T. Kamiya, 1997 .

Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces

R. Saito, K. Suzuki, Tadamasa Kimura, 1996 .

Deep levels in indium phosphide implanted with argon and phosphorus

Y. Adachi, S. Yugo, M. Kuwata, 1989 .

Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantation

R. Saito, T. Kamiya, M. Murata, 1993 .

Deep Levels in Argon-Implanted and Annealed Indium Phosphide

Jikui Luo, Y. Adachi, S. Yugo, 1987 .

Toward Small Size Waveguide Amplifiers Based on Erbium Silicate for Silicon Photonics

Hideo Isshiki, Tadamasa Kimura, H. Isshiki, 2008, IEICE Trans. Electron..

Rare earth silicates as gain media for silicon photonics [Invited]

F. Jing, Takuya Sato, T. Nakajima, 2014 .

Towards epitaxial growth of ErSiO nanostructured crystalline films on Si substrates

H. Isshiki, K. Tateishi, K. Ueda, 2006 .

Role of Energy Migration in Nonradiative Relaxation Processes in ErxY2-xSiO5 Crystalline Thin Films

Tadamasa Kimura, T. Nakajima, Yasuhito Tanaka, 2013 .

Characteristics of the electroluminescence and photoluminescence emission of erbium ions doped in InP and the energy transfer mechanism

R. Saito, T. Ikoma, H. Isshiki, 1991 .

Impact excitation of the erbium‐related 1.54 μm luminescence peak in erbium‐doped InP

Tadamasa Kimura, T. Ikoma, H. Isshiki, 1991 .

Time‐resolved study on the impact excitation and quenching processes of the 1.54 μm electroluminescence emission of Er ions in InP

R. Saito, T. Ikoma, H. Ishida, 1994 .

Excitation and Relaxation Processes of Impact Excitation Emission of Er3+ Ions in InP

R. Saito, T. Ikoma, H. Isshiki, 1993 .

Enhanced Yb3+-related 0.98 μm emission in porous silicon and its time decay characteristics

R. Saito, T. Kimura, Y. Nishida, 1998 .

Time Decay Characteristics of the Yb 3+ - Related 0.98 μm Emissions in Porous Silicon

R. Saito, H. Isshiki, T. Kimura, 1997 .

Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH3)4)

R. Saito, H. Isshiki, M. Wada, 2003 .

A modelling of diamond nucleation

S. Yugo, K. Semoto, H. Nakai, 1995 .

Formation mechanisms of diamond precursors during the nucleation process

Tadamasa Kimura, N. Nakamura, M. Hashimoto, 1997 .

Analysis of heteroepitaxial mechanism of diamond grown by chemical vapor deposition

N. Nakamura, S. Yugo, T. Kimura, 1998 .

Effects of hydrogen plasma on the diamond nucleation by chemical vapour deposition

S. Yugo, T. Kanai, T. Kimura, 1992 .

Prospects of Si-based Light Emitting Devices

H. Isshiki, T. Kimura, 2007 .

Extraordinary infrared photoluminescence efficiency of Er0.1Yb1.9SiO5 films on SiO2/Si substrates

Tadamasa Kimura, Zhiping Zhou, Xingjun Wang, 2011 .

Photoluminescence enhancement and high gain amplification of ErxY2−xSiO5 waveguide

Tadamasa Kimura, Zhiping Zhou, Xuezhong Wang, 2010 .

Fabrication and characterization of Er silicates on SiO2/Si substrates

Tadamasa Kimura, T. Nakajima, H. Isshiki, 2009 .

The effect of annealing conditions on the crystallization of Er-Si-O formed by solid phase reaction

H. Isshiki, K. Masaki, T. Kimura, 2006 .

Erbium–Silicon–Oxide crystalline films prepared by MOMBE

Tadamasa Kimura, H. Isshiki, K. Masaki, 2005 .

Fine structure in the Er-related emission spectrum from Er-Si-O matrices at room temperature under carrier mediated excitation

A. Polman, Tadamasa Kimura, H. Isshiki, 2003 .

Investigation of Electrical Properties in Vapor-Grown Carbon Fiber doped with Boron and Phosphorus by the Ion Implantation Method

S. Yugo, T. Kimura, T. Misaki, 1981 .

Thermoelectric figure of merit of boron phosphide

Takashi Sato, Tadamasa Kimura, S. Yugo, 1985 .

Humidity Sensitive Electrical Conduction of Polycrystalline Boron Nitride Films

Katsumi Yamamoto, S. Yugo, T. Kimura, 1978 .

Cluster calculations of rare-earth ions in semiconductors.

R. Saito, T. Kimura, 1992, Physical review. B, Condensed matter.

Relativistic Effect on Multiplet Terms of Rare Earth Ions.

R. Saito, S. Yabushita, Tadamasa Kimura, 1994 .

Low-Temperature Formation of β-Type Silicon Carbide by Ion-Beam Mixing

Y. Adachi, S. Yugo, Y. Tatebe, 1985 .

Ab Initio Calculations of the Multiplet Terms of (TmP4)3+ Cluster

R. Saito, S. Yabushita, Tadamasa Kimura, 1993 .

Effect of mixing ions on the formation process of β-SiC fabricated by ion beam mixing

Y. Adachi, Y. Kazumata, S. Yugo, 1988 .

Auger electron spectroscopy analysis of SiC layers formed by carbon ion implantation into silicon

Y. Machi, S. Yugo, Shigeru Kagiyama, 1984 .

Humidity-sensitive electrical properties and switching characteristics of BN films

Katsumi Yamamoto, S. Yugo, T. Kimura, 1980 .