R. Gwoziecki

发表

Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

G. Garnier, J. Biscarrat, R. Gwoziecki, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Refinement of the Subthreshold Slope Modeling for Advanced Bulk CMOS Devices

T. Skotnicki, A. Pouydebasque, R. Gwoziecki, 2007, IEEE Transactions on Electron Devices.

Organic Electronics June 2013

Patrice Rannou, Gilles Horowitz, Raphael Clerc, 2013 .

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT

G. Meneghesso, M. Meneghini, R. Gwoziecki, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

A complete SPICE subcircuit-based model library for organic photodiodes

Christophe Serbutoviez, R. Gwoziecki, A. Daami, 2012 .

Fast behavioral modeling of organic CMOS devices for digital and analog circuit applications

Rachid Hamani, Romain Coppard, Emmanuel Bergeret, 2011, Organic Photonics + Electronics.

Optimization of V/sub th/ roll-off in MOSFET's with advanced channel architecture-retrograde doping and pockets

Thomas Skotnicki, R. Gwoziecki, P. Bouillon, 1999 .

Static and Dynamic Studies of Electro-Active Polymer Actuators and Integration in a Demonstrator

Fabrice Domingues Dos Santos, S. Fanget, Fabrice Casset, 2017 .

Design and realization of electroactive polymer actuators for transparent and flexible haptic feedback interfaces

R. Gwoziecki, F. Casset, S. Fanget, 2016, 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

Smart pockets-total suppression of roll-off and roll-up [MOSFET doping]

T. Skotnicki, R. Gwoziecki, T. Skotnicki, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

Reliability of OTFTs on flexible substrate: mechanical stress effect

Romain Coppard, R. Gwoziecki, Xavier Boddaert, 2011 .

New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate

G. Guegan, S. Deleonibus, J. Pretet, 2008 .

Search for the optimal channel architecture for 0.18/0.12 /spl mu/m bulk CMOS experimental study

T. Skotnicki, I. Sagnes, R. Gwoziecki, 1996, International Electron Devices Meeting. Technical Digest.

Heavily doped and extremely shallow junctions on insulator by SONCTION (SilicON Cut-off juncTION) process

T. Skotnicki, R. Pantel, R. Gwoziecki, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

First-Si fully functional Bulk-PDSOI migration of low-power SRAM

Philippe Flatresse, C. Raynaud, R. Gwoziecki, 2005 .

Modification of gold source and drain electrodes by self-assembled monolayer in staggered n- and p-channel organic thin film transistors

Christophe Serbutoviez, Romain Coppard, Gilles Horowitz, 2010 .

Physics of the Subthreshold Slope - Initial Improvement and Final Degradation in Short CMOS Devices

T. Skotnicki, R. Gwoziecki, T. Skotnicki, 2002, 32nd European Solid-State Device Research Conference.

Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Gerard Ghibaudo, Romain Coppard, Isabelle Chartier, 2010 .

Effect of Density of States on Mobility in Small-Molecule n-Type Organic Thin-Film Transistors Based on a Perylene Diimide

G. Ghibaudo, A. Cerdeira, A. Castro-Carranza, 2012, IEEE Electron Device Letters.

High density and high speed SRAM bit-cells and ring oscillators due to laser annealing for 45nm bulk CMOS

N. Planes, D. Delille, T. Skotnicki, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

New Mechanism of Body Charging in Partially Depleted SOI-MOSFETs with Ultra-thin Gate Oxides

S. Cristoloveanu, J. Pretet, H. Brut, 2002, 32nd European Solid-State Device Research Conference.

Investigation on the Suitability of Vertical MOSFET's for High Speed (RF) CMOS Applications

T. Skotnicki, M. Jurczak, R. Gwoziecki, 1998, 28th European Solid-State Device Research Conference.

A Self-Aligned, Electrically Separable Double-Gate MOS Transistor Technology for Dynamic Threshold Voltage Application

Michel Haond, Stephane Monfray, Thomas Skotnicki, 2003 .

Analytical modeling of the contact resistance in top gate/bottom contacts organic thin film transistors

Gerard Ghibaudo, Romain Coppard, Isabelle Chartier, 2011 .

Influence of the semi-conductor layer thickness on electrical performance of staggered n- and p-channel organic thin-film transistors

Romain Coppard, Isabelle Chartier, Gilles Horowitz, 2010 .

Development of Haptic Button Based on Electro Active Polymer Actuator

Fabrice Casset, Antoine Latour, R. Gwoziecki, 2016 .

Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress

G. Reimbold, G. Ghibaudo, S. Orain, 2004, IEEE Transactions on Electron Devices.

Step toward robust and reliable amorphous polymer field-effect transistors and logic functions made by the use of roll to roll compatible printing processes

Gilles Sicard, Christophe Serbutoviez, Romain Coppard, 2010 .

New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate

G. Guegan, S. Deleonibus, J. Pretet, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

Electrical analysis of mechanical stress induced by shallow trench isolation [MOSFETs]

G. Reimbold, G. Ghibaudo, C. Raynaud, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices

Stephane Monfray, Thomas Skotnicki, M. Jurczak, 2001 .

Dielectric pockets – a new concept of the junctions for deca-nanometric CMOS devices

T. Skotnicki, S. Monfray, D. Dutartre, 2000, 30th European Solid-State Device Research Conference.