A. Osipov

发表

Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epitaxy

S. Kukushkin, M. Kompan, N. Feoktistov, 2009 .

SEMIPOLAR GALLIUM NITRIDE ON SILICON: TECHNOLOGY AND PROPERTIES

A. Ioffe, S. Kukushkin, V. Bessolov, 2014 .

Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions

S. Kukushkin, A. Redkov, A. Osipov, 2015, Physics of the Solid State.

Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

S. Kukushkin, A. Osipov, A. V. Redkov, 2020, Mechanics of Solids.

A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon

S. Kukushkin, A. Osipov, 2017 .

Elastic interaction of point defects in cubic and hexagonal crystals

S. Kukushkin, R. Telyatnik, A. Osipov, 2016, Physics of the Solid State.

Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO

S. Kukushkin, A. Redkov, A. S. Grashchenko, 2021 .

Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Carbide

S. Kukushkin, A. Osipov, 2019, Physics of the Solid State.

A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction of point defects and dilatation dipoles

S. Kukushkin, A. Osipov, 2013 .

Thin-film condensation processes

S. Kukushkin, S. A. Kukushkin, A. Osipov, 1998 .

A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles

S. Kukushkin, A. Osipov, 2013 .

Elastic interaction of point defects in cubic and hexagonal crystals

A. V. Osipov, S. Kukushkin, R. Telyatnik, 2016 .

Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface

S. Kukushkin, G. Benemanskaya, P. Dementev, 2016 .

The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface

S. Kukushkin, G. Benemanskaya, M. N. Lapushkin, 2016 .

Growing III–V Semiconductor Heterostructures on SiC/Si Substrates

S. Kukushkin, A. S. Grashchenko, A. V. Red’kov, 2019, Technical Physics Letters.

Epitaxial gallium oxide on a SiC/Si substrate

A. V. Osipov, S. Kukushkin, V. Nikolaev, 2016 .

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface

S. Kukushkin, G. Benemanskaya, S. Timoshnev, 2019, Technical Physics Letters.

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

S. Kukushkin, N. Feoktistov, A. Osipov, 2014 .

Thermodynamics and kinetics of the initial stages of polarization switching in ferroelectrics

S. A. Kukushkin, A. Osipov, 2001 .

Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

D. Kiselev, S. Kukushkin, I. P. Pronin, 2016 .

Real-time diagnostics of growth of germanium nanocrystallites on partially hydrogen-terminated silicon surfaces by spectroscopic ellipsometry

A. V. Osipov, F. Schmitt, P. Hess, 2002 .

Stress-driven nucleation of coherent islands: theory and experiment

F. Schmitt, P. Hess, S. Kukushkin, 2002 .

New phase formation on solid surfaces and thin film condensation

S. Kukushkin, A. Osipov, 1996 .

Type IIA photosensitivity and formation of pores in optical fibers under intense ultraviolet irradiation

M. Shlyagin, S. Kukushkin, A. Chtcherbakov, 2007 .

Kinetic model of vapour-deposited thin film condensation: nucleation stage

A. Osipov, 1993 .

Soliton model of island migration in thin films

S. Kukushkin, A. Osipov, 1995 .

Evolution of Phase Composition and Associated Properties in the Process of Growth of Nanostructured Films

S. Kukushkin, A. Osipov, 2000 .

Microscopic theory of epitaxial film growth on vicinal surfaces

S. Kukushkin, A. Osipov, 1993 .

The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains

P. Hess, S. Kukushkin, F. Schmitt, 2002 .

Growth of faceted pores in a multi-component crystal by applying mechanical stress

S. Kukushkin, A. Redkov, A. Osipov, 2020 .

Kinetics of the initial stage of first-order phase transitions

S. Kukushkin, I. P. Pronin, E. Kaptelov, 1998 .

Kinetics of first-order phase transitions in the asymptotic stage

S. Kukushkin, A. Osipov, 1998 .

A continuum model for thin-film condensation

A. Osipov, 1995 .

Evolution of phase composition and associated properties in the process of growth of thin films

S. Kukushkin, A. Osipov, 1999 .

Formation and evolution of the phase composition and associated properties during the growth of thin films

S. Kukushkin, A. Osipov, 1997 .

Self-organization in the process of multicomponent film nucleation

S. Kukushkin, A. Osipov, 1997 .

Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

S. Kukushkin, A. Redkov, A. Osipov, 2020 .

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

S. Kukushkin, E. Konenkova, V. Panteleev, 2017 .

Polarization switching kinetics in ferroelectrics

S. Kukushkin, A. Osipov, 2001 .

Kinetics of thin film nucleation from multi-component vapor

S. A. Kukushkin, A. Osipov, 1995 .

Techniques for Polytypic Transformations in Silicon Carbide

S. Kukushkin, A. Osipov, 2019, Physics of the Solid State.

Structural and elastoplastic properties of $$\upbeta $$β-$$\hbox {Ga}_{2}\hbox {O}_{3}$$Ga2O3 films grown on hybrid SiC/Si substrates

A. V. Osipov, S. Kukushkin, V. Nikolaev, 2018 .

Structural and elastoplastic properties of β -Ga 2 O 3 ﬁlms grown on hybrid SiC/Si substrates

S. Kukushkin, V. Nikolaev, I. Soshnikov, 2018 .

Kinetics of the initial stage in a first-order phase transformation in thin films

S. Kukushkin, I. P. Pronin, E. Kaptelov, 1997 .

Self-Organization of the Composition of AlxGa1 – xN Films Grown on Hybrid SiC/Si Substrates

E. Ubyivovk, S. Kukushkin, K. Kotlyar, 2021, Physics of the Solid State.

Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

S. A. Kukushkin, A. Osipov, 2016 .

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure

A. V. Osipov, S. Kukushkin, R. Telyatnik, 2015 .

Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions

S. Kukushkin, A. Redkov, A. Osipov, 2014 .

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

A. V. Osipov, S. Kukushkin, A. Osipov, 2014 .

Structural characterization of GaN epilayers on silicon: Effect of buffer layers

S. Kukushkin, L. Sorokin, A. Kalmykov, 2011 .

New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment

S. Kukushkin, A. Osipov, 2008 .

Theory of Phase Transformations in the Mechanics of Solids and its Applications for Description of Fracture, Formation of Nanostructures and Thin Semiconductor Films Growth

S. Kukushkin, A. Osipov, 2012 .

Phase transitions and the nucleation of catalytic nanostructures under the action of chemical, physical, and mechanical factors

S. Kukushkin, A. Osipov, 2008 .

Real-time analysis of wetting-layer evolution and island nucleation using spectroscopic ellipsometry with Tauc–Lorentz parametrization

F. Schmitt, P. Hess, A. Osipov, 2005 .

Kinetics of non-isothermal nucleation of thin films

S. Kukushkin, A. Osipov, 1995 .

Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

A. V. Osipov, S. Kukushkin, V. V. Antipov, 2018 .

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

S. Kukushkin, A. Osipov, 2017 .

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

A. Tsatsul'nikov, S. Troshkov, S. Kukushkin, 2015 .

Semipolar AlN on Si(100)

S. Kukushkin, V. Bessolov, E. Konenkova, 2017 .

Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Method of Atom Substitution

A. V. Osipov, S. Kukushkin, K. Kotlyar, 2019, Physics of the Solid State.

First-order phase transition through an intermediate state

S. Kukushkin, A. Osipov, 2014 .

Growth, structure, and morphological stability of nuclei growing from eutectic melts

S. Kukushkin, A. Osipov, 1997 .

Epitaxial growth of cadmium sulfide films on silicon

S. Kukushkin, V. V. Antipov, A. Osipov, 2016 .

Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire

A. V. Osipov, A. Tumarkin, S. Kukushkin, 2015 .

Kinetic model of coherent island formation in the case of self-limiting growth

F. Schmitt, P. Hess, S. Kukushkin, 2001 .

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic substitution

S. Kukushkin, A. S. Grashchenko, A. Osipov, 2019, Journal of Physics: Conference Series.

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

S. Kukushkin, V. V. Antipov, A. Osipov, 2017 .

Epitaxial silicon carbide on a 6″ silicon wafer

S. Kukushkin, N. Feoktistov, A. Lukyanov, 2014 .

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

S. Kukushkin, M. Kompan, M. Shcheglov, 2008 .

Spintronic Properties of the Interface between Si(111) and 3C–SiC(111) Grown by the Method of Coordinated Substitution of Atoms

S. Kukushkin, A. Osipov, E. V. Osipova, 2022, Technical Physics Letters.

Spiral growth of a multicomponent crystal from vapor of its components

S. Kukushkin, A. Redkov, A. Osipov, 2020 .

Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions

S. Kukushkin, A. Redkov, A. Osipov, 2015 .

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

S. Kukushkin, A. Osipov, 2021, Materials.

Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates

S. Kukushkin, V. V. Antipov, A. Osipov, 2019, Technical Physics Letters.

Kinetics of laser-induced oxidation of silicon near room temperature

A. V. Osipov, P. Hess, P. Patzner, 2006 .

Real-time analysis of UV laser-induced growth of ultrathin oxide films on silicon by spectroscopic ellipsometry

P. Hess, P. Patzner, A. Osipov, 2005 .

Properties of SiC Films Obtained by the Method of Substitution of Atoms on Porous Silicon

S. Kukushkin, I. Soshnikov, A. S. Grashchenko, 2018 .

Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

S. Kukushkin, A. Osipov, 2017 .

Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

S. Kukushkin, A. Osipov, 2022, Russian Journal of General Chemistry.

New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric Properties

A. V. Osipov, S. Kukushkin, I. P. Pronin, 2019, Ferroelectrics.

Characterization of silicon-oxide interfaces and organic monolayers by IR-UV ellipsometry and FTIR spectroscopy

Dominic Lingenfelser, Andreas Schmohl, Zhigao Hu, 2006, SPIE Optics + Photonics.

Formation of Hexagonal Ge Stripes on the Side Facets of AlGaAs Nanowires: Implications for Near-Infrared Detectors

A. V. Osipov, V. Dubrovskii, D. Kirilenko, 2021, ACS Applied Nano Materials.

SUBSTRATES FOR EPITAXY OF GALLIUM NITRIDE: NEW MATERIALS AND TECHNIQUES

V. Nevolin, S. Kukushkin, V. Bessolov, 2008 .

Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon

N. Beisenkhanov, S. Kukushkin, D. Bakranova, 2017 .

Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon

A. V. Osipov, N. Beisenkhanov, S. Kukushkin, 2016 .

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

S. A. Grudinkin, T. Perova, N. Feoktistov, 2010 .

MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

A. V. Osipov, E. Nikitina, G. Cirlin, 2018, Advances in Condensed Matter Physics.

The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms

A. V. Osipov, S. Kukushkin, A. Osipov, 2017 .

Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heterostructure

A. V. Osipov, A. Bolshakov, A. Mozharov, 2019, Materials Science in Semiconductor Processing.

Self-organization in the formation of a nanoporous carbon material

S. Gordeev, Y. Pavlov, S. A. Kukushkin, 2000 .

A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films

S. Kukushkin, M. Shcheglov, S. Sharofidinov, 2023, Mechanics of Solids.

Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates

S. Kukushkin, M. Shcheglov, S. Sharofidinov, 2022, Materials.

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

A. Lipovskii, D. Karpov, S. Kukushkin, 2016 .

Dielectric Function and Magnetic Moment of Silicon Carbide Containing Silicon Vacancies

A. V. Osipov, S. Kukushkin, A. Osipov, 2022, Materials.

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

S. Kukushkin, A. Osipov, 2021, Inorganic Materials.

Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates

S. Kukushkin, A. Redkov, S. Sharofidinov, 2020, Technical Physics Letters.

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution

A. V. Osipov, I. P. Kalinkin, S. Kukushkin, 2018 .

The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates

A. V. Osipov, S. Kukushkin, A. A. Koryakin, 2021, Technical Physics Letters.

Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates

S. Kukushkin, K. Shubina, T. N. Berezovskaya, 2019, Physics of the Solid State.

Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates

A. V. Osipov, S. Kukushkin, V. Nikolaev, 2018 .

Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM

S. Kukushkin, L. Sorokin, A. Kalmykov, 2011 .

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

P. Brunkov, S. Troshkov, S. Kukushkin, 2017 .

Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types

A. V. Osipov, S. Kukushkin, A. V. Red’kov, 2017 .

A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman Spectra

S. Kukushkin, Yu. E. Kitaev, A. Redkov, 2018, Physics of the Solid State.

Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

A. V. Osipov, S. Kukushkin, A. I. Romanychev, 2016 .

Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure

S. Kukushkin, L. Sorokin, A. Kalmykov, 2013 .

Comparative Ellipsometric Analysis of Silicon Carbide Polytypes 4H, 15R, and 6H Produced by a Modified Lely Method in the Same Growth Process

A. Markov, V. Luchinin, S. Kukushkin, 2020, Technical Physics Letters.

The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates

S. Kukushkin, I. Soshnikov, A. Redkov, 2018 .

Perturbation methods in the kinetics of nanocluster growth

P. Gordon, S. A. Kukushkin, A. Osipov, 2002 .

Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer

S. Kukushkin, A. Osipov, 2020, Materials.

Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substitution

S. Kukushkin, N. Feoktistov, A. Osipov, 2019, Physics of the Solid State.

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

S. Kukushkin, A. Osipov, 2013 .

Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution

A. V. Osipov, S. Kukushkin, A. S. Grashchenko, 2019, Physics of the Solid State.

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

A. V. Osipov, S. Kukushkin, A. Mizerov, 2018 .

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

S. Kukushkin, D. Bakranova, K. Nussupov, 2017 .

Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

V. Egorov, E. Egorov, S. Kukushkin, 2017 .

Determining polytype composition of silicon carbide films by UV ellipsometry

S. Kukushkin, A. Osipov, 2016 .

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

S. Kukushkin, A. S. Grashchenko, A. Osipov, 2014 .

Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble

S. Kukushkin, A. Osipov, 2012 .

Structural and optical properties of high quality ZnO thin film on Si with SiC buffer layer

Anirban Mitra, Bipin Kumar Gupta, B. K. Gupta, 2012 .

The Mechanical Properties of a SiC Composite Coating on Graphite Produced by the Atom-Substitution Method

A. V. Osipov, S. Kukushkin, A. Redkov, 2022, Technical Physics Letters.

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

R. V. Kuz’min, M. M. Mezdrogina, S. Kukushkin, 2008 .

A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)

S. D. Fedotov, S. Timoshenkov, S. Kukushkin, 2018, Reviews on Advanced Materials Science.

Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms

S. Kukushkin, A. Redkov, A. S. Grashchenko, 2021, Catalysis Today.

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers

E. Nikitina, M. Sobolev, S. Kukushkin, 2019, Semiconductors.

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

A. V. Osipov, S. Kukushkin, V. Ratnikov, 2013 .

Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis

A. V. Osipov, S. Kukushkin, A. S. Grashchenko, 2020, Mechanics of Solids.

Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice

S. Kukushkin, E. Kalinina, A. S. Grashchenko, 2017 .

Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide

S. Kukushkin, Yu. E. Kitaev, A. Osipov, 2017 .

Mechanism and kinetics of early growth stages of a GaN film

V. Bessolov, A. V. Luk’yanov, S. A. Kukushkin, 2002 .

Nucleation of III nitride semiconductors in heteroepitaxy

V. Bessolov, A. V. Luk’yanov, S. A. Kukushkin, 2001 .

The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers

A. V. Osipov, G. Cirlin, S. Kukushkin, 2019 .

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

S. A. Grudinkin, S. Kukushkin, N. Feoktistov, 2017 .

Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitution on synthesis time

S. Kukushkin, A. S. Grashchenko, N. Feoktistov, 2017 .

Optical and electrical properties of thin carbide-containing films on silicon

S. Gordeev, S. Kukushkin, S. B. Korchagina, 2006 .

Nonequilibrium heteroepitaxy of silicon carbide on silicon

S. Gordeev, S. Kukushkin, S. B. Korchagina, 2005 .

Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

I. P. Soshnikov, A. V. Osipov, E. Nikitina, 2016 .

Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices

A. V. Osipov, S. Kukushkin, M. Shcheglov, 2011 .

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

S. Kukushkin, M. Shcheglov, L. Sorokin, 2010 .

Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

A. V. Osipov, S. Kukushkin, A. Redkov, 2018, Mechanics of Solids.

Nanoindentation of GaN/SiC thin films on silicon substrate

S. Kukushkin, A. Redkov, A. S. Grashchenko, 2017 .

Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100) and (111) of Si single crystals and on surfaces of Si films grown on single crystals Al2O3

S. Kukushkin, A. Osipov, 2018, IOP Conference Series: Materials Science and Engineering.

Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

S. Kukushkin, N. Feoktistov, S. Obukhov, 2013 .

Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon

S. A. Grudinkin, S. Kukushkin, V. Golubev, 2015 .

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces

S. Kukushkin, L. Klyachkin, A. Malyarenko, 2021, Semiconductors.

Coating of a Nanostructured Profiled Si Surface with a SiC Layer

S. Kukushkin, A. S. Grashchenko, A. Osipov, 2020, Technical Physics Letters.

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

S. Kukushkin, V. Bessolov, E. Konenkova, 2017, Physics of the Solid State.

Model of the drain current saturation in long-gate JFETs and MESFETs

A. V. Osipov, M. Balucani, V. Dobrovolsky, 2005 .

GaN growth via HVPE on SiC/Si substrates: growth mechanisms

S. Kukushkin, A. Redkov, S. Sharofidinov, 2017 .

Thermodynamics and kinetics of switching effects in ferroelectrics

A. V. Osipov, S. Kukushkin, S. A. Kukushkin, 2002 .

Terahertz emission from silicon carbide nanostructures

S. Kukushkin, L. Klyachkin, A. Malyarenko, 2023, Semiconductors.