H. Rost

发表

High Nitrogen Doping During Bulk Growth of SiC

D. Siche, D. Schulz, H. Rost, 2004 .

Microscopic lateral overgrowth by physical vapour transport of GaN on self‐organized diamond‐like carbon masks

R. Yakimova, R. Fornari, M. Schmidbauer, 2009 .

Float-Zone silicon crystal growth at reduced RF frequencies

H. Riemann, R. Menzel, H. Rost, 2012 .

Pseudohalide vapour growth of thick GaN layers

D. Klimm, D. Gogova, D. Siche, 2010 .

Float zone (FZ) silicon: A potential material for advanced commercial solar cells?

H. Riemann, F. Schulze, F. Kirscht, 2012 .

Polytype stability in nitrogen-doped PVT—grown 2″—4H–SiC crystals

M. Rossberg, K. Irmscher, D. Siche, 2005 .

Polarity- and orientation-related defect distribution in 4H-SiC single crystals

R. Fornari, M. Schmidbauer, D. Siche, 2006 .

J. Wollweber, D. Siche, J. Doerschel, 2001 .

Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport

K. Irmscher, D. Siche, J. Doerschel, 2003 .

On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates

J. Wollweber, D. Siche, D. Schulz, 2003 .

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

J. Wollweber, K. Irmscher, D. Siche, 2003 .

Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT

J. Wollweber, W. Eiserbeck, K. Irmscher, 2000 .

Formation and properties of stacking faults in nitrogen-doped 4H-SiC

M. Albrecht, M. Rossberg, K. Irmscher, 2006 .

Evolution of domain walls in 6H- and 4H-SiC single crystals

J. Wollweber, D. Siche, J. Doerschel, 2002 .

Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method

J. Dolle, Günter Wagner, J. Wollweber, 1999 .

Silicon Floating Zone Process: Numerical Modeling of RF Field, Heat Transfer, Thermal Stress, and Experimental Proof for 4 Inch Crystals

H. Riemann, K. Böttcher, B. Schleusener, 1995 .

A new approach to grow C‐doped GaN thick epitaxial layers

R. Fornari, D. Gogova, K. Irmscher, 2011 .

Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone method

M. Renner, K. Dadzis, H.-J. Rost, 2020 .

Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method

F. Kießling, L. Sylla, R. Menzel, 2018, Journal of Crystal Growth.

Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growth

J. Wollweber, W. Eiserbeck, D. Siche, 1999 .

Impurity incorporation during sublimation growth of 6H bulk SiC

J. Wollweber, K. Irmscher, D. Siche, 1999 .

Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes

J. Wollweber, D. Siche, J. Doerschel, 2002 .

Investigations of the growth conditions for GaN‐bulk crystals grown by the sublimation technique

R. Fornari, R. Müller, M. Albrecht, 2007 .

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC

M. Rossberg, K. Irmscher, D. Siche, 2005 .

The role of carbon in transport processes during PVT growth of bulk GaN

R. Fornari, D. Gogova, D. Siche, 2009 .

Growth of GaN crystals from chlorine-free gas phase

R. Fornari, D. Gogova, D. Siche, 2008 .

Growth of single crystalline GaN from chlorine‐free gas phase

R. Fornari, D. Gogova, D. Siche, 2008 .

Source Material Related Distribution of Defects in 6H-SiC Single Crystals

J. Wollweber, D. Siche, D. Schulz, 2001 .

Stacking faults in heavily nitrogen doped 4H-SiC

H. Strunk, M. Nerding, K. Irmscher, 2004 .

The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals

M. Schmidbauer, D. Siche, H. Rost, 2006 .

Growth Induced Stacking Fault Formation in 4H-SiC

D. Siche, M. Albrecht, H. Rost, 2007 .