Xiang Yang

Pulsed Laser Annealing of Phosphorous-Implanted 4H-SiC: Electrical and Structural Characteristics

Zhi He, Zhongchao Fan, Fuhua Yang, 2021, Journal of Electronic Materials.

Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption

Zhi He, Zhongchao Fan, Fuhua Yang, 2022, Micromachines.

Enhancing the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering.

S. von Molnár, P. Xiong, Jianhua Zhao, 2011, Nano letters.

A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield

Fuhua Yang, Xiao-Feng Wang, A. Ji, 2012 .

Monostable-bistable transition logic element (MOBILE) model for single-electron transistors

Weihua Han, Fuhua Yang, Jianjun Chen, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

A review of manufacturing technologies for silicon carbide superjunction devices

C. Ma, Zhongchao Fan, Run Tian, 2021 .

Enhancing oxidation rate of 4H–SiC by oxygen ion implantation

Xiaodong Wang, Min Liu, C. Ma, 2018, Journal of Materials Science.

Extraction of the Trench Sidewall Capacitances in an n-Type 4H-SiC Trench Metal– Oxide–Semiconductor Structure

Fuhua Yang, Zhi He, Zhongchao Fan, 2021, IEEE Transactions on Electron Devices.

Enhancing the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering.

S. von Molnár, P. Xiong, Jianhua Zhao, 2011, Nano letters.

Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors

Weihua Han, Liuhong Ma, Hao Wang, 2015 .