R. Stahlbush

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

A. Agarwal, M. Al‐Jassim, N. Mahadik, 2022, 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).

Defects in 4H-SiC epilayers affecting device yield and reliability

A. Agarwal, B. Odekirk, N. Mahadik, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).