YueHu Wang

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

Renxu Jia, Jichao Hu, Yuming Zhang, 2016, Materials.

Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment

Hui Guo, Dang-Chao Wang, Yi Men Zhang, 2013 .

The intermediate semiconductor layer for the ohmic contact to silicon carbide by Germanium implantation

Hui Guo, D. Qiao, Yu-Ming Zhang, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

SiC epitaxial layers grown by chemical vapor deposition

Renxu Jia, Yuming Zhang, Yimen Zhang, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates

Renxu Jia, B. Xin, YueHu Wang, 2015 .

Semi-insulating SiC formed by Vanadium ion implantation

Hui Guo, Hongliang Lu, Yimen Zhang, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

Effect of electrical stress on the Al2O3-based 4H-SiC MOS capacitor with a thin SiO2 interface buffer layer

Renxu Jia, Qingwen Song, Yu-Ming Zhang, 2012, IEEE International Conference on Solid-State and Integrated Circuit Technology.

Nitrogen incorporation characteristics of 4H-SiC epitaxial layer

Yuming Zhang, Yimen Zhang, Renxu Jia, 2008, International Conference on Thin Film Physics and Applications.

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

Qingwen Song, Yimen Zhang, Sicheng Liu, 2021, IET Power Electronics.