Yi Meng Zhang

Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

Yuming Zhang, Hongliang Lv, Xiaoyan Tang, 2017 .

Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region

Xiaoyan Tang, Qingwen Song, Yi Men Zhang, 2018, Materials Science Forum.

Hole Trapping in the NBTI Characteristic of SiC MOSFETs

Hongliang Lv, Xiaoyan Tang, Qingwen Song, 2018, Materials Science Forum.

The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC

Linpeng Dong, Renxu Jia, Yongkun Wang, 2017 .

Extremely Thermal Stable Ni/W/TaSi2/Pt Simultaneous Ohmic Contacts to n-Type and p-Type 4H-SiC

Y. Li, Tao Guo, Yi Meng Zhang, 2018, Materials Science Forum.