Weichun Luo

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process*

Tianchun Ye, Jiang Yan, Huilong Zhu, 2017 .

New Challenges of Design for Reliability in Advanced Technology Node (Invited)

Dan Gao, Weichun Luo, Changze Liu, 2020, 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Impact of ALD TiN Capping Layer on Interface Trap and Channel Hot Carrier Reliability of HKMG nMOSFETs

Tianchun Ye, Bo Tang, Eddy Simoen, 2018, IEEE Electron Device Letters.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations*

Tianchun Ye, Yefeng Xu, Junfeng Li, 2016 .