Yanbin Luo

发表

Fabrication and characterization of high current gain (/spl beta/=430) and high power (23 A-500 V) 4H-SiC hybrid Darlington bipolar transistor

Jianhui Zhang, J.H. Zhao, P. Alexandrov, 2003, IEEE Transactions on Electron Devices.

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

Jianhui Zhang, J.H. Zhao, P. Alexandrov, 2003, IEEE Electron Device Letters.